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NPN Silicon
Elektronische Bauelemente Plastic-Encapsulate Transistor
A suffix of "-C" specifies halogen & lead-free
FEATURES Collector
3 3
SOT-23
High Fequency Application.
1 Dim Min Max
1
VHF Band Amplifier application A 2.800 3.040
2 Base
RoHS Compliant Product B 1.200 1.400
Power dissipation A 2 C 0.890 1.110
Emitter D 0.370 0.500
L
PCM : 0.25 W G 1.780 2.040
3
H 0.013 0.100
Collector Current Top View B S
1 2 J 0.085 0.177
ICM : 25mA K 0.450 0.600
V G
Collector-base voltage L 0.890 1.020
S 2.100 2.500
V(BR)CBO : 30 V C
V 0.450 0.600
Operating & storage junction temperature H J All Dimension in mm
D K
O O
Tj, Tstg : - 55 C ~ + 150 C
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100
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