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NPN Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
A Dim Min Max
L A 2.800 3.040
3
B 1.200 1.400
FEATURES Top View B S C 0.890 1.110
1 2
D 0.370 0.500
Power dissipation V G
G 1.780 2.040
H 0.013 0.100
PCM: 0.3 W (Tamb=25oC) J 0.085 0.177
C
Collector current K 0.450 0.600
D H J L 0.890 1.020
ICM: 0.6 A K
S 2.100 2.500
Collector-base voltage V 0.450 0.600
COLLECTOR
V(BR)CBO: 180 V All Dimension in mm
Operating and storage junction temperature range BASE
EMITTER
TJ, Tstg: -55 to +150oC
ELECTRICAL CHARACTERISTICS (Tamb=25oC unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100
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