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2.2 A, 60 V, RDS(ON) 194 m
Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High Cell Density
SC-59
process. Low RDS(on) assures minimal power loss and conserves energy, A
making this device ideal for use in power management circuitry. Typical L
3
applications are power switch, power management in portable and battery- 3
powered products such as computers, printers, PCMCIA cards, cellular Top View C B
1
and cordless telephones. 1 2
K E 2
FEATURES D
Low RDS(on) provides higher efficiency and extends battery life.
F G H J
Low gate charge
Fast switching
Miniature SC-59 surface mount package saves board space.
Millimeter Millimeter
PRODUCT SUMMARY REF.
Min. Max.
REF.
Min. Max.
A 2.70 3.10 G 0.10 REF.
SMG2398N B 2.25 3.00 H 0.40 REF.
C 1.30 1.70 J 0.10 0.20
VDS(V) RDS(on) (m ID(A) D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
194@VGS= 10V 2.2
60 F 0.35 0.50
273@VGS= 4.5V 1.8
PACKAGE INFORMATION
Package MPQ LeaderSize
SC-59 3K 7' inch
ABSOLUTE MAXIMUM RATINGS(TA=25
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