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-15A , -60V , RDS(ON) 90 m
Elektronische Bauelemente P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen-free
TO-251
DESCRIPTION
The SID9575 provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
FEATURES
Simple Drive Requirement
A
Lower On-resistance B C
D
Fast Switching Characteristic
GE
APPLICATION
The through-hole version (TO-251) is available for K
low-profile applications and suited for low voltage F
H
applications such as DC / DC converters.
2
Drain
MARKING: M J P
1 REF.
Millimeter
REF.
Millimeter
9575 Gate
Min. Max. Min. Max.
A 6.40 6.80 G 5.40 5.80
Date code B 5.20 5.50 H 0.90 1.50
C 2.20 2.40 J 2.30
D 0.45 0.55 K 0.60 0.90
E 6.80 7.20 M 0.50 0.70
3 F 7.20 7.80 P 0.45 0.60
Source
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS
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