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8.2 A , 20 V , RDS(ON) 17.5 m
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
DESCRIPTION DFN3x3-8PP
These miniature surface mount MOSFETs B
utilize a high cell density trench process to provide
low RDS(on) and to ensure minimal power loss and
heat dissipation. D
C
FEATURES
Low RDS(on) provides higher efficiency and e E
extends battery life
Low thermal impedance copper leadframe
A
DFN3x3-8PP saves board space
Fast switching speed d b
High performance trench technology
g
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, F
printers, PCMCIA cards, cellular and cordless telephones.
G
PACKAGE INFORMATION REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 0.70 0.90 0
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