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4.1A, 20V, RDS(ON) 47m
Elektronische Bauelemente N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
DESCRIPTION TSOP-6
These miniature surface mount MOSFETs utilize a high
A
cell density trench process to provide low RDS(on) and to E
L
ensure minimal power loss and heat dissipation. Typical 6 5 4
applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, and PCMCIA cards, B
cellular and cordless telephones.
1 2 3
F C H
FEATURES DG K J
Low on-resistance
Low drive current
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Millimeter Millimeter
Fast switching speed REF.
Min. Max.
REF.
Min. Max.
High performance trench technology A 2.70 3.10 G 0 0.10
B 2.60 3.00 H 0.60 REF.
C 1.40 1.80 J 0.12 REF.
D 1.10 MAX. K 0
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