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N-Ch: 3.3A, 30V, RDS(ON) 65 m
P-Ch: -2.3A, -30V, RDS(ON) 120 m
Elektronische Bauelemente N & P-Channel Enhancement Mode Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
DESCRIPTION TSOP-6
The STT6602 uses advanced trench technology to A
provide excellent on-resistance and low gate charge. E
L
The complementary MOSFETs form a high-speed 6 5 4
power inverter, suitable for a multitude of applications.
The TSOP-6 package is universally used for all
B
commercial-industrial surface mount applications.
1 2 3
FEATURES F C H
Low Gate Change DG K J
Low On-resistance
MARKING Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
A 2.70 3.10 G 0 0.10
6602 B 2.60 3.00 H 0.60 REF.
Date Code C 1.40 1.80 J 0.12 REF.
D 1.10 MAX. K 0
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