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NPN Silicon
Elektronische Bauelemente General Purpose Transistor
RoHS Compliant Product
SOT-223
C
1. BASE
FEATURES 2. COLLECTOR
E 3. EMITTER
C
Power dissipation B
P CM : 1 W Tamb=25
Collector current
I CM : 0.2 A
Collector-base voltage
V (BR)CBO : 6 0 V
Operating and storage junction temperature range
1 2 3
T J Tstg: -55 to +150 Unit : mm
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=10
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