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                                     2N7000
                                     N-channel enhancement mode field-effect transistor
                                     Rev. 03 -- 19 May 2000                                          Product specification




1. Description
                                 N-channel enhancement mode field-effect transistor in a plastic package using
                                 TrenchMOSTM1 technology.

                                 Product availability:
                                   2N7000 in SOT54 (TO-92 variant).


2. Features
                                 s TrenchMOSTM technology
                                 s Very fast switching
                                 s Logic level compatible.


3. Applications
                                 s Relay driver
                                 s High speed line driver
                         c
                                 s Logic level translator.
                     c




4. Pinning information
Table 1:    Pinning - SOT54, simplified outline and symbol
 Pin             Description                              Simplified outline          Symbol
 1               drain (d)
                                                                                                          d
 2               gate (g)
 3               source (s)
                                                                                                 g

                                                                            03ab40
                                                                     3 21                                     03ab30
                                                                                                          s

                                                              SOT54 (TO-92 variant)            N-channel MOSFET




1.   TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors                                                                                               2N7000
                                                                  N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2:         Quick reference data
Symbol Parameter                                       Conditions                            Typ                Max                Unit
VDS              drain-source voltage (DC)             Tj = 25 to 150 

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