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2n7002-03


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                                     2N7002
                                     N-channel enhancement mode field-effect transistor
                                     Rev. 03 -- 27 July 2000                                         Product specification




1. Description
                                 N-channel enhancement mode field-effect transistor in a plastic package using
                                 TrenchMOSTM1 technology.

                                 Product availability:
                                     2N7002 in SOT23.


2. Features
                                 s    TrenchMOSTM technology
                                 s    Very fast switching
                                 s    Logic level compatible
                                 s    Subminiature surface mount package.


3. Applications
                                 s Relay driver
                         c
                                 s High speed line driver
                     c

                                 s Logic level translator.


4. Pinning information
Table 1:    Pinning - SOT23, simplified outline and symbol
 Pin             Description                              Simplified outline          Symbol
 1               gate (g)
                                                                    3                                     d
 2               source (s)
 3               drain (d)
                                                                                                 g

                                                                             03ab44
                                                                                                              03ab30
                                                               1         2                                s

                                                                   SOT23                       N-channel MOSFET



1.   TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors                                                                                                2N7002
                                                                     N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2:         Quick reference data
Symbol Parameter                                       Conditions                             Typ                Max                Unit
VDS              drain-source voltage (DC)             Tj = 25 to 150 



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