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                   2N7002CK
                   60 V, 0.3 A N-channel Trench MOSFET
                   Rev. 01 -- 11 September 2009                                Product data sheet




1. Product profile

          1.1 General description
              ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a
              small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
              Trench MOSFET technology.

          1.2 Features
              I     Logic-level compatible
              I     Very fast switching
              I     Trench MOSFET technology
              I     ESD protection up to 3 kV

          1.3 Applications
              I     Relay driver
              I     High-speed line driver
              I     Low-side loadswitch
              I     Switching circuits

          1.4 Quick reference data
              Table 1.     Quick reference data
              Symbol       Parameter               Conditions       Min    Typ      Max     Unit
              VDS          drain-source voltage                     -      -        60      V
              ID           drain current                            -      -        300     mA
              IDM          peak drain current      single pulse;    -      -        1.2     A
                                                   tp  10 

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