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                   2PB709ART
                   45 V, 100 mA PNP general-purpose transistor
                   Rev. 01 -- 19 March 2007                                                 Product data sheet




1. Product profile

          1.1 General description
              PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
              (SMD) plastic package.

              NPN complement: 2PD601ART.

          1.2 Features
              I General-purpose transistor
              I Small SMD plastic package

          1.3 Applications
              I General-purpose switching and amplification

          1.4 Quick reference data
              Table 1.    Quick reference data
              Symbol Parameter                       Conditions             Min         Typ     Max            Unit
              VCEO       collector-emitter voltage   open base              -           -       -45            V
              IC         collector current                                  -           -       -100           mA
              hFE        DC current gain             VCE = -10 V;           210         -       340
                                                     IC = -2 mA


2. Pinning information
              Table 2.    Pinning
              Pin            Description                            Simplified outline        Symbol
              1              base
                                                                                3                             3
              2              emitter
              3              collector                                                                1
                                                                        1           2
                                                                                                              2
                                                                                                          sym013
NXP Semiconductors                                                                                       2PB709ART
                                                                        45 V, 100 mA PNP general-purpose transistor



3. Ordering information
                     Table 3.       Ordering information
                     Type number            Package
                                            Name          Description                                                      Version
                     2PB709ART              -             plastic surface-mounted package; 3 leads                         SOT23


4. Marking
                     Table 4.       Marking codes
                     Type number                              Marking code[1]
                     2PB709ART                                C5*

                     [1]    * = -: made in Hong Kong
                            * = p: made in Hong Kong
                            * = t: made in Malaysia
                            * = W: made in China


5. Limiting values
                     Table 5.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol           Parameter                     Conditions                       Min     Max               Unit
                     VCBO             collector-base voltage        open emitter                     -       -45               V
                     VCEO             collector-emitter voltage     open base                        -       -45               V
                     VEBO             emitter-base voltage          open collector                   -       -6                V
                     IC               collector current                                              -       -100              mA
                     ICM              peak collector current        single pulse;                    -       -200              mA
                                                                    tp  1 ms
                     IBM              peak base current             single pulse;                    -       -100              mA
                                                                    tp  1 ms
                     Ptot             total power dissipation       Tamb  25 

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