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                   2PD601ART
                   50 V, 100 mA NPN general-purpose transistor
                   Rev. 01 -- 15 March 2007                                                 Product data sheet




1. Product profile

          1.1 General description
              NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
              (SMD) plastic package.

              PNP complement: 2PB709ART.

          1.2 Features
              I General-purpose transistor
              I Small SMD plastic package

          1.3 Applications
              I General-purpose switching and amplification

          1.4 Quick reference data
              Table 1.   Quick reference data
              Symbol       Parameter                   Conditions           Min         Typ      Max        Unit
              VCEO         collector-emitter voltage   open base            -           -        50         V
              IC           collector current                                -           -        100        mA
              hFE          DC current gain             VCE = 10 V;          210         -        340
                                                       IC = 2 mA


2. Pinning information
              Table 2.   Pinning
              Pin           Description                            Simplified outline        Symbol
              1             base
                                                                                3                          3
              2             emitter
              3             collector                                                              1
                                                                       1            2
                                                                                                           2
                                                                                                       sym021
NXP Semiconductors                                                                                       2PD601ART
                                                                        50 V, 100 mA NPN general-purpose transistor



3. Ordering information
                     Table 3.       Ordering information
                     Type number            Package
                                            Name          Description                                                      Version
                     2PD601ART              -             plastic surface-mounted package; 3 leads                         SOT23


4. Marking
                     Table 4.       Marking codes
                     Type number                                             Marking code[1]
                     2PD601ART                                               C3*

                     [1]    * = -: made in Hong Kong
                            * = p: made in Hong Kong
                            * = t: made in Malaysia
                            * = W: made in China


5. Limiting values
                     Table 5.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol           Parameter                         Conditions                   Min     Max               Unit
                     VCBO             collector-base voltage            open emitter                 -       60                V
                     VCEO             collector-emitter voltage         open base                    -       50                V
                     VEBO             emitter-base voltage              open collector               -       6                 V
                     IC               collector current                                              -       100               mA
                     ICM              peak collector current            single pulse;                -       200               mA
                                                                        tp  1 ms
                     IBM              peak base current                 single pulse;                -       100               mA
                                                                        tp  1 ms
                     Ptot             total power dissipation           Tamb  25 

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