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                   BC847BPN
                   45 V, 100 mA NPN/PNP general-purpose transistor
                   Rev. 04 -- 18 February 2009                                                  Product data sheet




1. Product profile

          1.1 General description
              NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
              Surface-Mounted Device (SMD) plastic package.

          1.2 Features
              I    Low collector capacitance
              I    Low collector-emitter saturation voltage
              I    Closely matched current gain
              I    Reduces number of components and board space
              I    No mutual interference between the transistors

          1.3 Applications
              I General-purpose switching and amplification

          1.4 Quick reference data
              Table 1.   Quick reference data
              Symbol     Parameter                   Conditions                 Min         Typ      Max           Unit
              Per transistor; for the PNP transistor with negative polarity
              VCEO       collector-emitter voltage   open base                  -           -        45            V
              IC         collector current                                      -           -        100           mA
              hFE        DC current gain             VCE = 5 V; IC = 2 mA       200         -        450


2. Pinning information
              Table 2.   Pinning
              Pin           Description                             Simplified outline           Graphic symbol
              1             emitter TR1
                                                                            6       5   4             6     5      4
              2             base TR1
              3             collector TR2
                                                                                                                    TR2
              4             emitter TR2                                                             TR1

              5             base TR2                                        1       2   3
                                                                                                      1     2      3
              6             collector TR1
                                                                                                          sym019
NXP Semiconductors                                                                                       BC847BPN
                                                                  45 V, 100 mA NPN/PNP general-purpose transistor



3. Ordering information
                     Table 3.       Ordering information
                     Type number            Package
                                            Name          Description                                                         Version
                     BC847BPN               SC-88         plastic surface-mounted package; 6 leads                            SOT363


4. Marking
                     Table 4.       Marking codes
                     Type number                                              Marking code[1]
                     BC847BPN                                                 13*

                     [1]    * = -: made in Hong Kong
                            * = p: made in Hong Kong
                            * = t: made in Malaysia
                            * = W: made in China


5. Limiting values
                     Table 5.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol           Parameter                    Conditions                        Min      Max               Unit
                     Per transistor; for the PNP transistor with negative polarity
                     VCBO             collector-base voltage       open emitter                      -        50                V
                     VCEO             collector-emitter voltage    open base                         -        45                V
                     VEBO             emitter-base voltage         open collector                    -        5                 V
                     IC               collector current                                              -        100               mA
                     ICM              peak collector current       single pulse;                     -        200               mA
                                                                   tp  1 ms
                     IBM              peak base current            single pulse;                     -        200               mA
                                                                   tp  1 ms
                     Ptot             total power dissipation      Tamb  25 

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