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                   BC856S
                   65 V, 100 mA PNP/PNP general-purpose transistor
                   Rev. 02 -- 19 February 2009                                                Product data sheet




1. Product profile

          1.1 General description
              PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
              Surface-Mounted Device (SMD) plastic package.

          1.2 Features
              I    Low collector capacitance
              I    Low collector-emitter saturation voltage
              I    Closely matched current gain
              I    Reduces number of components and board space
              I    No mutual interference between the transistors

          1.3 Applications
              I General-purpose switching and amplification

          1.4 Quick reference data
              Table 1.   Quick reference data
              Symbol     Parameter                   Conditions               Min         Typ      Max              Unit
              Per transistor
              VCEO       collector-emitter voltage   open base                -           -        -65              V
              IC         collector current                                    -           -        -100             mA
              hFE        DC current gain             VCE = -5 V;              110         -        -
                                                     IC = -2 mA


2. Pinning information
              Table 2.   Pinning
              Pin              Description                         Simplified outline          Graphic symbol
              1                emitter TR1
                                                                          6       5   4                6     5      4
              2                base TR1
              3                collector TR2
                                                                                                                     TR2
              4                emitter TR2                                                        TR1

              5                base TR2                                   1       2   3
                                                                                                       1     2      3
              6                collector TR1
                                                                                                           sym018
NXP Semiconductors                                                                                              BC856S
                                                                  65 V, 100 mA PNP/PNP general-purpose transistor



3. Ordering information
                     Table 3.       Ordering information
                     Type number            Package
                                            Name          Description                                                         Version
                     BC856S                 SC-88         plastic surface-mounted package; 6 leads                            SOT363


4. Marking
                     Table 4.       Marking codes
                     Type number                                              Marking code[1]
                     BC856S                                                   5F*

                     [1]    * = -: made in Hong Kong
                            * = p: made in Hong Kong
                            * = t: made in Malaysia
                            * = W: made in China


5. Limiting values
                     Table 5.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol           Parameter                    Conditions                        Min      Max               Unit
                     Per transistor
                     VCBO             collector-base voltage       open emitter                      -        -80               V
                     VCEO             collector-emitter voltage    open base                         -        -65               V
                     VEBO             emitter-base voltage         open collector                    -        -5                V
                     IC               collector current                                              -        -100              mA
                     Ptot             total power dissipation      Tamb  25 

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