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                 BF1107
                 N-channel single gate MOSFET
                 Rev. 04 -- 9 January 2007                                                Product data sheet




1. Product profile

          1.1 General description
              The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss
              and high isolation capabilities of this MOSFET provide excellent RF switching functions.
              Integrated diodes between gate and source and between gate and drain protect against
              excessive input voltage surges. Drain and source are interchangeable.

CAUTION
                    This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                    during transport and handling.




          1.2 Features
              I Currentless RF switch

          1.3 Applications
              I Various RF switching applications such as:
                 N Passive loop through for VCR tuner
                 N Transceiver switching

          1.4 Quick reference data
              Table 1.    Quick reference data
              Symbol        Parameter               Conditions                       Min    Typ    Max    Unit
              Lins(on)      on-state insertion loss VSG = VDG = 0 V;
                                                    f = 50 MHz to 860 MHz
                                                      RS = RL = 50                   -      -      2.5    dB
                                                      RS = RL = 75                   -      -      3.5    dB
              ISLoff        off-state isolation     VSG = VDG = 5 V;
                                                    f = 50 MHz to 860 MHz
                                                      RS = RL = 50                   30     -      -      dB
                                                      RS = RL = 75                   30     -      -      dB
              RDSon         drain-source on-state   VGS = 0 V; ID = 1 mA             -      12     20     
                            resistance
              VGS(p)        gate-source pinch-off   VDS = 1 V; ID = 20 

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