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                    BF1108; BF1108R
                    Silicon RF switches
                    Rev. 04 -- 29 May 2008                                                     Product data sheet




1. Product profile

          1.1 General description
              These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
              band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
              low loss and high isolation capabilities of these devices provide excellent RF switching
              functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
              in low losses. Integrated diodes between gate and source and between gate and drain
              protect against excessive input voltage surges.

CAUTION
                     This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                     during transport and handling.




          1.2 Features
              I Specially designed for low loss RF switching up to 1 GHz

          1.3 Applications
              I Various RF switching applications such as:
                 N Passive loop through for VCR tuner
                 N Transceiver switching

          1.4 Quick reference data
              Table 1.      Quick reference data
              Symbol           Parameter               Conditions                         Min    Typ   Max   Unit
              Lins(on)         on-state insertion loss RS = RL = 50 ; f  1 GHz;     [1]   -      -     2     dB
                                                       VSK = VDK = 0 V; IF = 0 mA
              ISLoff           off-state isolation     RS = RL = 50 ; f  1 GHz;           30     -     -     dB
                                                       VSK = VDK = 5 V; IF = 1 mA
              RDSon            drain-source on-state   VKS = 0 V; ID = 1 mA               -      12    20    
                               resistance
              VGS(p)           gate-source pinch-off   VDS = 1 V; ID = 20 



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