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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1202; BF1202R; BF1202WR
N-channel dual-gate PoLo
MOS-FETs
Product specification 2010 Sep 16
Supersedes data of 2000 Mar 29
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR
FEATURES PINNING
Short channel transistor with high PIN DESCRIPTION 3
handbook, 2 columns 4
forward transfer admittance to input
1 source
capacitance ratio
2 drain
Low noise gain controlled amplifier
3 gate 2
Partly internal self-biasing circuit to 2 1
ensure good cross-modulation 4 gate 1
performance during AGC and good Top view MSB035
DC stabilization. Marking code legend:
BF1202R marking code: LE*
* = - : made in Hong Kong
APPLICATIONS
* = p : made in Hong Kong Fig.2 Simplified outline
VHF and UHF applications with * = t : made in Malaysia (SOT143R).
3 to 9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
4
handbook, 2 columns 3 lfpage 3 4
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and 1 2 2 1
substrate interconnected. Integrated
diodes between gates and source Top view MSB014 Top view MSB842
protect against excessive input
voltage surges. The BF1202, BF1202 marking code: LD* BF1202WR marking code: LE*
BF1202R and BF1202WR are
encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline
SOT143R and SOT343R plastic (SOT143B). (SOT343R).
packages respectively.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 10 V
ID drain current 30 mA
Ptot total power dissipation 200 mW
yfs forward transfer admittance 25 30 40 mS
Cig1-ss input capacitance at gate 1 1.7 2.2 pF
Crss reverse transfer capacitance f = 1 MHz 15 30 fF
F noise figure f = 800 MHz 1.1 1.8 dB
Xmod cross-modulation input level for k = 1% at 100 105 dBV
40 dB AGC
Tj operating junction temperature 150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2010 Sep 16 2
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 10 V
ID drain current 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation
BF1202; BF1202R Ts 113 C; note 1 200 mW
BF1202WR Ts 119 C; note 1 200 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point
BF1202; BF1202R 185 K/W
BF1202WR 155 K/W
MCD951
250
handbook, halfpage
Ptot
(mW)
200
(2) (1)
150
100
50
0
0 50 100 150 200
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