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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BF1203
Dual N-channel dual gate
MOS-FET
Product specification 2001 Apr 25
Supersedes data of 2000 Dec 04
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
FEATURES PINNING - SOT363
Two low noise gain controlled amplifiers in a single PIN DESCRIPTION
package
1 gate 1 (a)
Superior cross-modulation performance during AGC
2 gate 2
High forward transfer admittance
3 drain (a)
High forward transfer admittance to input capacitance
4 drain (b)
ratio.
5 source
6 gate 1 (b)
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment. g1 (b) s d (b)
handbook, halfpage
6 5 4
DESCRIPTION
The BF1203 is a combination of two different dual gate
AMP AMP
MOS-FET amplifiers with shared source and gate 2 leads. a b
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very 1 2 3
good cross-modulation performance during AGC. Top view g1 (a) g2 d (a) MBL254
Integrated diodes between the gates and source protect
against excessive input voltage surges. The transistor is
Marking code: L2-
encapsulated in a SOT363 micro-miniature plastic
package.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per MOS-FET unless otherwise specified
VDS drain-source voltage 10 V
ID drain current (DC) 30 mA
yfs forward transfer admittance amp. a: ID = 15 mA 23 28 35 mS
amp. b: ID = 12 mA 25 30 40 mS
Cig1-s input capacitance at gate 1 amp. a: ID = 15 mA; f = 1 MHz 2.6 3.1 pF
amp. b: ID = 12 mA; f = 1 MHz 1.7 2.2 pF
Crss reverse transfer capacitance f = 1 MHz 15 fF
NF noise figure amp. a: f = 400 MHz; ID = 15 mA 1 1.8 dB
amp. b: f = 800 MHz; ID = 12 mA 1.1 1.8 dB
Xmod cross-modulation amp. a: input level for k = 1% at 40 dB AGC 105 dBV
amp. b: input level for k = 1% at 40 dB AGC 100 105 dBV
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2001 Apr 25 2
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1203
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per MOS-FET unless otherwise specified
VDS drain-source voltage 10 V
ID drain current (DC) 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation Ts 102 C; note 1 200 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 240 K/W
MGS359
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0 50 100 150 200
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