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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BF1204
Dual N-channel dual gate
MOS-FET
Product specification 2010 Sep 16
Supersedes data of 2001 Apr 25
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1204
FEATURES PINNING - SOT363
Two low noise gain controlled amplifiers in a single PIN DESCRIPTION
package
1 gate 1 (a)
Superior cross-modulation performance during AGC
2 gate 2
High forward transfer admittance
3 gate 1 (b)
High forward transfer admittance to input capacitance
4 drain (b)
ratio.
5 source
6 drain (a)
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional handbook, halfpage d (a) s d (b)
6 5 4
communications equipment.
DESCRIPTION AMP AMP
a b
The BF1204 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
1 2 3 g1 (a) g2 g1 (b)
The source and substrate are interconnected. Internal bias
Top view MBL252
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated Marking code: L3* * = - : made in Hong Kong
diodes between the gates and source protect against * = p : made in Hong Kong
* = t : made in Malaysia
excessive input voltage surges. The transistor has a
SOT363 micro-miniature plastic package. Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per MOS-FET; unless otherwise specified
VDS drain-source voltage 10 V
ID drain current (DC) 30 mA
Ptot total power dissipation Ts 102 C; note 1 200 mW
yfs forward transfer admittance ID = 12 mA; f = 1 MHz 25 30 40 mS
Cig1-s input capacitance at gate 1 ID = 12 mA; f = 1 MHz 1.7 2.2 pF
Crss reverse transfer capacitance f = 1 MHz 15 fF
NF noise figure f = 800 MHz 1.1 1.8 dB
Xmod cross-modulation input level for k = 1% at 40 dB AGC 100 105 dBV
Tj operating junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the source lead.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2010 Sep 16 2
NXP Semiconductors Product specification
Dual N-channel dual gate MOS-FET BF1204
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per MOS-FET; unless otherwise specified
VDS drain-source voltage 10 V
ID drain current (DC) 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation Ts 102 C 200 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 240 K/W
MGS359
250
handbook, halfpage
Ptot
(mW)
200
150
100
50
0
0 50 100 150 200
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