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                 BF1205C
                 Dual N-channel dual gate MOS-FET
                 Rev. 02 -- 15 August 2006                                             Product data sheet




1. Product profile

          1.1 General description
              The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source
              and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1
              bias of amplifier b.

              The source and substrate are interconnected. Internal bias circuits enable
              DC stabilization and a very good cross-modulation performance during AGC. Integrated
              diodes between the gates and source protect against excessive input voltage surges. The
              transistor has a SOT363 micro-miniature plastic package.

CAUTION
                   This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                   during transport and handling.




          1.2 Features
              I Two low noise gain controlled amplifiers in a single package; one with a fully integrated
                bias and one with a partly integrated bias
              I Internal switch to save external components
              I Superior cross-modulation performance during AGC
              I High forward transfer admittance
              I High forward transfer admittance to input capacitance ratio.

          1.3 Applications
              I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
                voltage
                 N digital and analog television tuners
                 N professional communication equipment.
Philips Semiconductors                                                                                                      BF1205C
                                                                                             Dual N-channel dual gate MOS-FET


                     1.4 Quick reference data
                         Table 1. Quick reference data
                         Per MOS-FET unless otherwise specified.
                         Symbol Parameter                                 Conditions                                Min         Typ         Max Unit
                         VDS           drain-source voltage                                                         -           -           6          V
                         ID            drain current (DC)                                                           -           -           30         mA
                         Ptot          total power dissipation            Tsp  107 

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