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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
MBD128
BF1206
Dual N-channel dual-gate
MOS-FET
Product specification 2003 Nov 17
NXP Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
FEATURES PINNING - SOT363
Two low noise gain controlled amplifiers in a single PIN DESCRIPTION
package
1 drain (b)
Superior cross-modulation performance during AGC
2 source
High forward transfer admittance
3 gate 1 (b)
High forward transfer admittance to input capacitance
4 gate 1 (a)
ratio.
5 gate 2
6 drain (a)
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 5 V supply voltage, such as digital and
handbook, halfpage d (a) g2 g1 (a)
analog television tuners.
6 5 4
DESCRIPTION
AMP
a
The BF1206 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads. AMP
The source and substrate are interconnected. Internal bias b
circuits enable DC stabilization and a very good 1 2 3
cross-modulation performance during AGC. Integrated Top view
diodes between the gates and source protect against d (b) s g1 (b)
MAM480
excessive input voltage surges. The transistor is
encapsulated in SOT363 micro-miniature plastic package.
Marking code: L6-.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per MOS-FET; unless otherwise specified
VDS drain-source voltage 6 V
ID drain current (DC) 30 mA
yfs forward transfer admittance amp. a: ID = 18 mA 33 38 48 mS
amp. b: ID = 12 mA 29 34 44 mS
Cig1-s input capacitance at gate 1 amp. a: ID = 18 mA; f = 1 MHz 2.4 2.9 pF
amp. b: ID = 12 mA; f = 1 MHz 1.7 2.2 pF
Crss reverse transfer capacitance f = 1 MHz 15 fF
Xmod cross-modulation amp. a: input level for k = 1% at 102 105 dBV
40 dB AGC
amp. b: input level for k = 1% at 100 103 dBV
40 dB AGC
NF noise figure amp. a: f = 400 MHz; ID = 18 mA 1.3 1.9 dB
amp. b: f = 800 MHz; ID = 12 mA 1.4 2.0 dB
amp. a: f = 11 MHz; ID = 18 mA 3 dB
amp. b: f = 11 MHz; ID = 12 mA 3.5 dB
2003 Nov 17 2
NXP Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
BF1206 plastic surface mounted package; 6 leads SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per MOS-FET; unless otherwise specified
VDS drain-source voltage 6 V
ID drain current (DC) 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation Ts 107 C; note 1 180 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 240 K/W
2003 Nov 17 3
NXP Semiconductors Product specification
Dual N-channel dual-gate MOS-FET BF1206
MLE257
200
handbook, halfpage
Ptot
(mW)
150
100
50
0
0 50 100 150 200
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