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                      BF1207
                      Dual N-channel dual gate MOSFET
                      Rev. 01 -- 28 July 2005                                     Product data sheet




1. Product profile

          1.1 General description
                   The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source
                   and gate2 leads and an integrated switch.

                   The source and substrate are interconnected. Internal bias circuits enable Direct Current
                   (DC) stabilization and a very good cross-modulation performance during Automatic Gain
                   Control (AGC). Integrated diodes between the gates and source protect against excessive
                   input voltage surges. The BF1207 has a SOT363 micro-miniature plastic package.

CAUTION
                       This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                       during transport and handling.

          MSC895




          1.2 Features
                   s Two low noise gain controlled amplifiers in a single package. One with a fully
                     integrated bias and one with partly integrated bias
                   s Internal switch to save external components
                   s Superior cross-modulation performance during AGC
                   s High forward transfer admittance
                   s High forward transfer admittance to input capacitance ratio

          1.3 Applications
                   s Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
                     Frequency (UHF) applications with 5 V supply voltage, such as digital and analog
                     television tuners and professional communication equipment
Philips Semiconductors                                                                                                                 BF1207
                                                                                              Dual N-channel dual gate MOSFET


                     1.4 Quick reference data
                         Table 1: Quick reference data
                         Per MOSFET unless otherwise specified.
                         Symbol Parameter                                 Conditions                                   Min         Typ         Max Unit
                         VDS           drain-source voltage               DC                                           -           -           6          V
                         ID            drain current                      DC                                           -           -           30         mA
                         Ptot          total power dissipation            Tsp  107 

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