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                 BF1208D
                 Dual N-channel dual gate MOSFET
                 Rev. 01 -- 16 May 2007                                               Product data sheet




1. Product profile

          1.1 General description
              The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source
              and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
              bias of amplifier B.

              The source and substrate are interconnected. Internal bias circuits enable
              DC stabilization and a very good cross modulation performance during Automatic Gain
              Control (AGC). Integrated diodes between the gates and source protect against excessive
              input voltage surges. The transistor has a SOT666 micro-miniature plastic package.

CAUTION
                  This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                  during transport and handling.




          1.2 Features
              I Two low noise gain controlled amplifiers in a single package. One with a fully
                integrated bias and one with a partly integrated bias
              I Internal switch to save external components
              I Superior cross modulation performance during AGC
              I High forward transfer admittance
              I High forward transfer admittance to input capacitance ratio

          1.3 Applications
              I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
                voltage
                 N digital and analog television tuners
                 N professional communication equipment
NXP Semiconductors                                                                                                      BF1208D
                                                                                               Dual N-channel dual gate MOSFET


                     1.4 Quick reference data
                         Table 1. Quick reference data
                         Per MOSFET unless otherwise specified.
                         Symbol Parameter                                  Conditions                          Min       Typ         Max Unit
                         VDS            drain-source voltage               DC                                  -         -           6          V
                         ID             drain current                      DC                                  -         -           30         mA
                         Ptot           total power dissipation            Tsp  109 

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