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                 BF1210
                 Dual N-channel dual gate MOSFET
                 Rev. 01 -- 25 October 2006                                            Product data sheet




1. Product profile

          1.1 General description
              The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source
              and gate2 leads.

              The source and substrate are interconnected. Internal bias circuits enable
              DC stabilization and a very good cross modulation performance during AGC. Integrated
              diodes between the gates and source protect against excessive input voltage surges. The
              transistor has a SOT363 micro-miniature plastic package.

CAUTION
                   This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                   during transport and handling.




          1.2 Features
              I Two low noise gain controlled amplifiers in a single package; both with a partly
                integrated bias
              I Superior cross modulation performance during AGC
              I High forward transfer admittance
              I High forward transfer admittance to input capacitance ratio

          1.3 Applications
              I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
                voltage
                 N digital and analog television tuners
                 N professional communication equipment
NXP Semiconductors                                                                                                             BF1210
                                                                                               Dual N-channel dual gate MOSFET


                     1.4 Quick reference data
                         Table 1. Quick reference data
                         Per MOSFET unless otherwise specified.
                         Symbol Parameter                                  Conditions                              Min     Typ        Max Unit
                         VDS            drain-source voltage                                                       -       -          6           V
                         ID             drain current                      DC                                      -       -          30          mA
                         Ptot           total power dissipation            Tsp  107 

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