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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1211; BF1211R; BF1211WR
N-channel dual-gate MOS-FETs
Product specification 2003 Dec 16
NXP Semiconductors Product specification
BF1211; BF1211R;
N-channel dual-gate MOS-FETs
BF1211WR
FEATURES PINNING
Short channel transistor with high forward transfer PIN DESCRIPTION
admittance to input capacitance ratio
1 source
Low noise gain controlled amplifier
2 drain
Excellent low frequency noise performance
3 gate 2
Partly internal self-biasing circuit to ensure good
4 gate 1
cross-modulation performance during AGC and good
DC stabilization.
4
handbook, 2 columns 3
APPLICATIONS
Gain controlled low noise VHF and UHF amplifiers for
5 V digital and analog television tuner applications.
1 2
Top view MSB014
DESCRIPTION
BF1211 marking code: LFp
Enhancement type N-channel field-effect transistor with
source and substrate interconnected. Integrated diodes
Fig.1 Simplified outline (SOT143B).
between gates and source protect against excessive input
voltage surges. The BF1211, BF1211R and BF1211WR
are encapsulated in the SOT143B, SOT143R and
SOT343R plastic packages respectively.
3
handbook, 2 columns 4 handbook, halfpage 3 4
2 1
2 1
Top view MSB035 Top view MSB842
BF1211R marking code: LHp BF1211WR marking code: MK
Fig.2 Simplified outline (SOT143R). Fig.3 Simplified outline (SOT343R).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 6 V
ID drain current 30 mA
Ptot total power dissipation 180 mW
yfs forward transfer admittance 25 30 40 mS
Cig1-ss input capacitance at gate 1 2.1 2.6 pF
Crss reverse transfer capacitance f = 1 MHz 15 30 fF
F noise figure f = 400 MHz 0.9 1.6 dB
Xmod cross-modulation input level for k = 1% at 100 105 dBV
40 dB AGC
Tj junction temperature 150 C
2003 Dec 16 2
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
BF1211 plastic surface mounted package; 4 leads SOT143B
BF1211R plastic surface mounted package; reverse pinning; 4 leads SOT143R
BF1211WR plastic surface mounted package; reverse pinning; 4 leads SOT343R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 6 V
ID drain current (DC) 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation
BF1211; BF1211R Ts 116 C; note 1 180 mW
BF1211WR Ts 122 C; note 1 180 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 150 C
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth(j-s) thermal resistance from junction to soldering point
BF1211; BF1211R 185 K/W
BF1211WR 155 K/W
2003 Dec 16 3
NXP Semiconductors Product specification
N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR
MDB828
250
handbook, halfpage
Ptot
(mW)
200
150 (2) (1)
100
50
0
0 50 100 150 200
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