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                 BF1216
                 Dual N-channel dual gate MOSFET
                 Rev. 01 -- 29 April 2010                                               Product data sheet




1. Product profile

          1.1 General description
              The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source
              and gate2 leads.

              The source and substrate are interconnected. Internal bias circuits enable DC stabilization
              and very good cross modulation performance during AGC. Integrated diodes between the
              gates and source protect against excessive input voltage surges. The transistor is
              available as a SOT363 micro-miniature plastic package.

CAUTION
                   This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                   during transport and handling.




          1.2 Features and benefits
                 Two low noise gain controlled amplifiers in a single package; both with a partly
                 integrated bias
                 Superior cross modulation performance during AGC
                 High forward transfer admittance
                 High forward transfer admittance to input capacitance ratio

          1.3 Applications
                 Gain controlled low noise amplifiers for VHF and UHF applications running on a 5 V
                 supply voltage
                    digital and analog television tuners
                    professional communication equipment
NXP Semiconductors                                                                                                                                           BF1216
                                                                                                                            Dual N-channel dual gate MOSFET


                     1.4 Quick reference data
                         Table 1.        Quick reference data for amplifier A and B
                         Symbol Parameter                                                  Conditions                                            Min   Typ        Max           Unit
                         VDS            drain-source voltage                               DC                                                    -     -          6             V
                         ID             drain current                                      DC                                                    -     -          30            mA
                         Ptot           total power dissipation                            Tsp  107 

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