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BF1218
Dual N-channel dual gate MOSFET
Rev. 01 -- 14 April 2010 Product data sheet
1. Product profile
1.1 General description
The BF1218 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable DC stabilization
and a very good cross modulation performance during Automatic Gain Control (AGC).
Integrated diodes between the gates and source protect against excessive input voltage
surges. The transistor has a SOT363 micro-miniature plastic package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
Internal switch to save external components
Superior cross modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
1.3 Applications
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
digital and analog television tuners
professional communication equipment
NXP Semiconductors BF1218
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage DC - - 6 V
ID drain current DC - - 30 mA
Ptot total power dissipation Tsp 109 C [1] - - 180 mW
yfs forward transfer admittance f = 100 MHz; Tj = 25 C
amplifier A; ID = 19 mA 26 31 41 mS
amplifier B; ID = 15 mA 25 30 40 mS
Ciss(G1) input capacitance at gate1 f = 100 MHz
amplifier A [2] - 2.1 2.6 pF
amplifier B [2] - 2.1 2.6 pF
Crss reverse transfer capacitance f = 100 MHz [2] - 20 - fF
NF noise figure YS = YS(opt)
amplifier A; f = 400 MHz - 0.9 1.5 dB
amplifier B; f = 800 MHz - 1.4 2.0 dB
Xmod cross modulation input level for k = 1 %;
fw = 50 MHz;
funw = 60 MHz
at 40 dB AGC
amplifier A [3] 102 105 - dBV
amplifier B [4] 102 105 - dBV
Tj junction temperature - - 150 C
[1] Tsp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 33 test circuit.
[4] Measured in Figure 34 test circuit.
2. Pinning information
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1 gate1 (AMP A)
6 5 4
2 gate2 AMP A
3 gate1 (AMP B) G1A DA
4 drain (AMP B)
5 source 1 2 3 G2 S
6 drain (AMP A)
G1B DB
AMP B
sym089
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