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DISCRETE SEMICONDUCTORS
DATA SHEET
BF245A; BF245B; BF245C
N-channel silicon field-effect
transistors
Product specification 1996 Jul 30
Supersedes data of April 1995
NXP Semiconductors Product specification
BF245A; BF245B;
N-channel silicon field-effect transistors
BF245C
FEATURES PINNING
Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION
Frequencies up to 700 MHz. 1 d drain
2 s source
APPLICATIONS 3 g gate
LF, HF and DC amplifiers.
DESCRIPTION
1
handbook, halfpage 2
General purpose N-channel symmetrical junction 3 d
field-effect transistors in a plastic TO-92 variant package. g
s
MAM257
CAUTION
The device is supplied in an antistatic package. The
Fig.1 Simplified outline (TO-92 variant)
gate-source input must be protected against static
and symbol.
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 30 V
VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V 0.25 8 V
VGSO gate-source voltage open drain 30 V
IDSS drain current VDS = 15 V; VGS = 0
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
Ptot total power dissipation Tamb = 75 C 300 mW
yfs forward transfer admittance VDS = 15 V; VGS = 0; 3 6.5 mS
f = 1 kHz; Tamb = 25 C
Crs reverse transfer capacitance VDS = 20 V; VGS = 1 V; 1.1 pF
f = 1 MHz; Tamb = 25 C
1996 Jul 30 2
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 30 V
VGDO gate-drain voltage open source 30 V
VGSO gate-source voltage open drain 30 V
ID drain current 25 mA
IG gate current 10 mA
Ptot total power dissipation up to Tamb = 75 C; 300 mW
up to Tamb = 90 C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm 10 mm.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient in free air 250 K/W
thermal resistance from junction to ambient 200 K/W
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)GSS gate-source breakdown voltage IG = 1 A; VDS = 0 30 V
VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V 0.25 8.0 V
VGS gate-source voltage ID = 200 A; VDS = 15 V
BF245A 0.4 2.2 V
BF245B 1.6 3.8 V
BF245C 3.2 7.5 V
IDSS drain current VDS = 15 V; VGS = 0; note 1
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
IGSS gate cut-off current VGS = 20 V; VDS = 0 5 nA
VGS = 20 V; VDS = 0; Tj = 125 C 0.5 A
Note
1. Measured under pulse conditions: tp = 300 s; 0.02.
1996 Jul 30 3
NXP Semiconductors Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Cis input capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz 4 pF
Crs reverse transfer capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz 1.1 pF
Cos output capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz 1.6 pF
gis input conductance VDS = 15 V; VGS = 0; f = 200 MHz 250 S
gos output conductance VDS = 15 V; VGS = 0; f = 200 MHz 40 S
yfs forward transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz 3 6.5 mS
VDS = 15 V; VGS = 0; f = 200 MHz 6 mS
yrs reverse transfer admittance VDS = 15 V; VGS = 0; f = 200 MHz 1.4 mS
yos output admittance VDS = 15 V; VGS = 0; f = 1 kHz 25 S
fgfs cut-off frequency VDS = 15 V; VGS = 0; gfs = 0.7 of its 700 MHz
value at 1 kHz
F noise figure VDS = 15 V; VGS = 0; f = 100 MHz; 1.5 dB
RG = 1 k (common source);
input tuned to minimum noise
MGE785 MGE789
-10 6
handbook, halfpage
handbook, halfpage ID
IGSS
(mA)
(nA) 5
-1
4
typ
-10-1 3
2
-10-2
1
-10-3 0
0 50 100 150 -4 -2 VGS (V) 0
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