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bf510_bf511_bf512_bf513_cnv_2


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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BF510 to 513
  N-channel silicon field-effect
  transistors
Product specification                         December 1997
File under Discrete Semiconductors, SC07
Philips Semiconductors                                                                                  Product specification


    N-channel silicon field-effect transistors                                                         BF510 to 513

DESCRIPTION                                MARKING CODE
Asymmetrical N-channel planar              BF510 = S6p
epitaxial junction field-effect            BF511 = S7p
transistors in the miniature plastic
                                           BF512 = S8p
envelope intended for applications up
to the v.h.f. range in hybrid thick and    BF513 = S9p
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
                                                   handbook, halfpage        3
(BF511) and mains radios (BF512) or
the mixer stage (BF513).                                                                                d
                                                                                              g
                                                                                                        s

PINNING - SOT23
                                                                  1                2
1    = gate                                                       Top view                    MAM385
2    = drain
3    = source



                                                                  Fig.1 Simplified outline and symbol.



QUICK REFERENCE DATA
Drain-source voltage                                   VDS        max.                        20                      V
Drain current (DC or average)                          ID         max.                        30                      mA
Total power dissipation
    up to Tamb = 40 



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