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                          BF861A; BF861B; BF861C
                          N-channel junction FETs
                          Rev. 04 -- 24 September 2004                                 Product data sheet




1. Product profile

                   1.1 General description
                       N-channel symmetrical junction field effect transistors in a SOT23 package.

CAUTION
                       The device is supplied in an antistatic package. The gate-source input must be protected against
                       static discharge during transport or handling.

          MSC895




                   1.2 Features
                       s High transfer admittance                       s Low input capacitance
                       s Low feedback capacitance                       s Low noise.


                   1.3 Applications
                       s Preamplifiers for AM tuners in car radios.

                   1.4 Quick reference data
                       Table 1:   Quick reference data
                       Symbol       Parameter               Conditions                  Min     Typ      Max      Unit
                       VDS          drain-source voltage                                -       -        25       V
                                    (DC)
                       IDSS         drain current
                                       BF861A               VGS = 0 V; VDS = 8 V        2       -        6.5      mA
                                       BF861B               VGS = 0 V; VDS = 8 V        6       -        15       mA
                                       BF861C               VGS = 0 V; VDS = 8 V        12      -        25       mA
                       Ptot         total power dissipation up to Tamb = 25 



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