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                   DISCRETE SEMICONDUCTORS




   DATA SHEET
 book, halfpage




                        M3D088




    BF862
    N-channel junction FET
Product specification                        2000 Jan 05
Supersedes data of 1999 Jun 29
NXP Semiconductors                                                                                          Product specification


  N-channel junction FET                                                                                                  BF862

FEATURES                                                         PINNING SOT23
 High transition frequency for excellent sensitivity in               PIN                             DESCRIPTION
 AM car radios
                                                                        1             source
 High transfer admittance.
                                                                        2             drain
                                                                        3             gate
APPLICATIONS
 Pre-amplifiers in AM car radios.
                                                                                 2
                                                                 handbook, halfpage                 1
DESCRIPTION
Silicon N-channel symmetrical junction field-effect                                                                             d
                                                                                                                g
transistor in a SOT23 package. Drain and source are                                                                             s
interchangeable.

                                                                                             3
                                                                      Top view                              MAM036



                                                                    Marking code: 2Ap.

                                                                               Fig.1 Simplified outline and symbol.


QUICK REFERENCE DATA

     SYMBOL                         PARAMETER                               CONDITIONS           MIN.     TYP.       MAX.   UNIT
VDS               drain-source voltage                                                                               20     V
VGSoff            gate-source cut-off voltage                                                    0.3     0.8         1.2    V
IDSS              drain-source current                                                           10                  25     mA
Ptot              total power dissipation                                   Ts  90 C                                 300    mW
yfs               transfer admittance                                                            35      45                 mS
Tj                junction temperature                                                                               150    C


                                                          CAUTION
 This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
 and handling.




2000 Jan 05                                                  2
NXP Semiconductors                                                                            Product specification


  N-channel junction FET                                                                                 BF862

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
     SYMBOL                             PARAMETER                          CONDITIONS     MIN.      MAX.    UNIT
VDS                    drain-source voltage                                                         20      V
VDG                    drain-gate voltage                                                           20      V
VGS                    gate-source voltage                                                          20      V
IDS                    drain-source current                                                         40      mA
IG                     forward gate current                                                         10      mA
Ptot                   total power dissipation                         Ts  90 C; note 1             300     mW
Tstg                   storage temperature                                                65        +150    C
Tj                     junction temperature                                                         150     C

Note
1. Main heat transfer is via the gate lead.


THERMAL CHARACTERISTICS

     SYMBOL                             PARAMETER                          CONDITIONS        VALUE         UNIT
Rth j-s                thermal resistance from junction to soldering   note 1                 200          K/W
                       point

Note
1. Soldering point of the gate lead.




                                                     MCD808
         400
handbook, halfpage
        Ptot
       (mW)

         300




         200




         100




           0
               0        40       80         120             160
                                                  Ts (

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