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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BF994S
  N-channel dual-gate MOS-FET
Product specification                             July 1993
NXP Semiconductors                                                                                   Product specification


    N-channel dual-gate MOS-FET                                                                                  BF994S

FEATURES                                                        DESCRIPTION
 Protected against excessive input voltage surges by            Depletion type field-effect transistor in a plastic SOT143
 integrated back-to-back diodes between gates                   microminiature package with interconnected source
 and source.                                                    and substrate.


APPLICATIONS
 VHF applications such as:                                      handbook, halfpage                                       d
    

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