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                        DISCRETE SEMICONDUCTORS




  DATA SHEET




  BF996S
  N-channel dual-gate MOS-FET
Product specification                             April 1991
NXP Semiconductors                                                                                  Product specification


    N-channel dual-gate MOS-FET                                                                                   BF996S

FEATURES                                                       DESCRIPTION
 Protected against excessive input voltage surges by           Depletion type field-effect transistor in a plastic SOT143
 integrated back-to-back diodes between gates                  microminiature package with interconnected source
 and source.                                                   and substrate.


APPLICATIONS
 RF applications such as:                                      handbook, halfpage                                        d
                                                                                 4       3
    

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