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DISCRETE SEMICONDUCTORS
DATA SHEET
BF998WR
N-channel dual-gate MOS-FET
Product specification 1997 Sep 05
Supersedes data of 1995 Apr 25
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
FEATURES PINNING
High forward transfer admittance PIN SYMBOL DESCRIPTION
Short channel transistor with high forward transfer 1 s, b source
admittance to input capacitance ratio
2 d drain
Low noise gain controlled amplifier up to 1 GHz.
3 g2 gate 2
4 g1 gate 1
APPLICATIONS
VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
d
communications equipment.
3 4
g
DESCRIPTION 2
g1
Depletion type field-effect transistor in a plastic
microminiature SOT343R package with source and
substrate interconnected. The transistor is protected
against excessive input voltage surges by integrated 2 1
back-to-back diodes between gates and source. s,b
Top view MAM198
CAUTION
Marking code: MB.
The device is supplied in an antistatic package. The
gate-source input must be protected against static
Fig.1 Simplified outline (SOT343R) and symbol.
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VDS drain-source voltage 12 V
ID drain current 30 mA
Ptot total power dissipation 300 mW
Tj operating junction temperature 150 C
yfs forward transfer admittance 24 mS
Cig1-s input capacitance at gate 1 2.1 pF
Crs reverse transfer capacitance f = 1 MHz 25 fF
F noise figure f = 800 MHz 1 dB
1997 Sep 05 2
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 12 V
ID drain current 30 mA
IG1 gate 1 current 10 mA
IG2 gate 2 current 10 mA
Ptot total power dissipation up to Tamb = 45 C; see Fig.2; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature +150 C
Note
1. Device mounted on a printed-circuit board.
MLD154
400
handbook, halfpage
Ptot
(mW)
300
200
100
0
0 50 100 150 200
Tamb ( oC)
Fig.2 Power derating curve.
1997 Sep 05 3
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 350 K/W
Rth j-s thermal resistance from junction to soldering point note 2; Ts = 90 C 200 K/W
Notes
1. Device mounted on a printed-circuit board.
2. Ts is the temperature at the soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA 6 20 V
V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA 6 20 V
V(P)G1-S gate 1-source cut-off voltage VG2-S = 4 V; VDS = 8 V; ID = 20 A 2.5 V
V(P)G2-S gate 2-source cut-off voltage VG1-S = 0; VDS = 8 V; ID = 20 A 2 V
IDSS drain-source current VG2-S = 4 V; VDS = 8 V; VG1-S = 0 2 18 mA
IG1-SS gate 1 cut-off current VG2-S = VDS = 0; VG1-S = 5 V 50 nA
IG2-SS gate 2 cut-off current VG1-S = VDS = 0; VG2-S = 5 V 50 nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; VG2-S = 4 V; ID = 10 mA; VDS = 8 V; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
yfs forward transfer admittance pulsed; Tj = 25 C 22 25 mS
Cig1-s input capacitance at gate 1 f = 1 MHz 2.1 2.5 pF
Cig2-s input capacitance at gate 2 f = 1 MHz 1.2 pF
Cos drain-source capacitance f = 1 MHz 1.05 pF
Crs reverse transfer capacitance f = 1 MHz 25 fF
F noise figure f = 200 MHz; GS = 2 mS; BS = BSopt 0.6 dB
f = 800 MHz; GS = 3.3 mS; BS = BSopt 1 dB
1997 Sep 05 4
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
MGC471 MGC470
24 24
3V
V G1 S =
ID V G2 S = 4 V ID 0.4 V
2V
(mA) (mA)
0.3 V
16 1V 16 0.2 V
0.1 V
0V
8 8 -0.1 V
-0.2 V
-0.3 V
0V -0.4 V
-0.5 V
0 0
1 0 1 0 2 4 6 8 10
V G1 S (V)
V DS (V)
VDS = 8 V. VG2-S = 4 V.
Tamb = 25 C. Tamb = 25 C.
Fig.3 Transfer characteristics; typical values. Fig.4 Output characteristics; typical values.
MGC472 MGC473
24 30
y fs 4V
ID max typ (mS)
(mS) 24
3V
2V
16
1V
18
min 12
8
6
0.5 V
V G2 - S = 0 V
0 0
-1600 -1200 -800 -400 0 400 0 4 8 12 16 20
VG1 (mV) I D (mA)
VDS = 8 V; VG2 = 4 V; Tamb = 25 C. VDS = 8 V; Tamb = 25 C.
Fig.5 Drain current as a function of gate 1 voltage; Fig.6 Forward transfer admittance as a function
typical values. of drain current; typical values.
1997 Sep 05 5
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
MGC474 MGC475
30 1.5
y fs V G2 S = 4 V Cos
(mS) (pF)
24 1.4
3V
18 1.3
12 2V 1.2
ID =
12 mA
6 1V 1.1 10 mA
8 mA
0V
0 1.0
-1 0 1 4 6 8 10 12 14
VG1-S (V) VDS(V)
VDS = 8 V; Tamb = 25 C. VG2-S = 4 V; f = 1 MHz; Tamb = 25 C.
Fig.7 Forward transfer admittance as a function Fig.8 Output capacitance as a function of
of gate 1 voltage; typical values. drain-source voltage; typical values.
MGC476 MGC477
2.4 2.4
Cis Cis
(pF)
(pF)
2.2
2.3
2.0
2.2
1.8
2.1
1.6
1.4 2.0
-2.4 -1.6 -0.8 0 0.8 6 4 2 0 -2
VG1-S (mV) VG2-S (V)
VDS = 8 V; VG2-S = 4 V; f = 1 MHz; Tamb = 25 C. VDS = 8 V; VG1-S = 0 V; f = 1 MHz; Tamb = 25 C.
Fig.9 Gate 1 input capacitance as a function of Fig.10 Gate 1 input capacitance as a function of
gate 1-source voltage; typical values. gate 2-source voltage; typical values.
1997 Sep 05 6
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
MGC466 MGC467
10 10 3 10 3
y is y rs rs
(mS) (S) (deg)
b is rs
1 10 2 10 2
y rs
10 1 10 10
g is
10 2 1 1
10 102 f (MHz) 10 3 10 102 f (MHz) 10 3
VDS = 8 V; VG2-S = 4 V. VDS = 8 V; VG2-S = 4 V.
ID = 10 mA; Tamb = 25 C. ID = 10 mA; Tamb = 25 C.
Fig.11 Input admittance as a function of the Fig.12 Reverse transfer admittance and phase as
frequency; typical values. a function of frequency; typical values.
MGC468 MGC469
10 2 10 2 10
yos
y fs fs (mS) bos
(mS) y fs (deg)
1
10 10
fs
gos
10 1
1 1 10 2
10 102 f (MHz) 10 3 10 102 f (MHz) 10 3
VDS = 8 V; VG2-S = 4 V. VDS = 8 V; VG2-S = 4 V.
ID = 10 mA; Tamb = 25 C. ID = 10 mA; Tamb = 25 C.
Fig.13 Forward transfer admittance and phase as Fig.14 Output admittance as a function of the
a function of frequency; typical values. frequency; typical values.
1997 Sep 05 7
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
VDD
47 F
1 nF
VAGC 20 H
1 nF 1 nF
1 nF
1.8 50
47 k L2 input
k
1 nF
C1
5.5 pF
50 1 nF
input
360
L1 15 pF 10 pF
140 k
VDD 1 nF
D1 330 D2 330
BB405 k BB405 k
100
k
1 nF 1 nF
V tun V tun
input output MGC481
VDD = 12 V; GS = 2 mS; GL = 0.5 mS.
L1 = 45 nH; 4 turns 0.8 mm copper wire, internal diameter 4 mm.
L2 = 160 nH; 3 turns 0.8 mm copper wire, internal diameter 8 mm.
Tapped at approximately half a turn from the cold side, to adjust GL = 0.5 mS. C1 adjusted for GS = 2 mS.
Fig.15 Gain control testcircuit at f = 200 MHz.
1997 Sep 05 8
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
V DD VAGC VDD
1 nF
140
1 nF
;; ;;
k
270 L4
100 k 1 nF k
L3 1 nF
50
;;
input
L1 1 nF C3 C4
1 nF 0.5-3.5 pF 4-40 pF
1 nF L2
50
input MGC480
C1 C2
2-18 pF 0.5-3.5 pF 1.8 360
k
V DD
VDD = 12 V; GS = 3.3 mS; GL = 1 mS.
L1 = L4 = 200 nH; 11 turns 0.5 mm copper wire, without spacing, internal diameter 3 mm.
L2 = 2 cm, silvered 0.8 mm copper wire, 4 mm above ground plane.
L3 = 2 cm, silvered 0.5 mm copper wire, 4 mm above ground plane.
Fig.16 Gain control test circuit at f = 800 MHz.
MGC479 MGC478
0 0
Gtr Gtr
(dB) (dB)
-10 -10
IDSS=
-20 -20 max
typ
min
-30 -30
-40 IDSS= -40
max
typ
min
-50 -50
0 2 4 6 8 10 0 2 4 6 8 10
VAGC(V) VAGC(V)
VDD = 12 V; f = 200 MHz; Tamb = 25 C. VDD = 12 V; f = 800 MHz; Tamb = 25 C.
Fig.17 Automatic gain control characteristics Fig.18 Automatic gain control characteristics
measured in circuit of Fig.15. measured in circuit of Fig.16.
1997 Sep 05 9
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
D B E A X
y HE v M A
e
3 4
Q
A
A1
c
2 1
w M B bp b1 Lp
e1
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp b1 c D E e e1 HE Lp Q v w y
max
1.1 0.4 0.7 0.25 2.2 1.35 2.2 0.45 0.23
mm 0.1 1.3 1.15 0.2 0.2 0.1
0.8 0.3 0.5 0.10 1.8 1.15 2.0 0.15 0.13
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
97-05-21
SOT343R
06-03-16
1997 Sep 05 10
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
DATA SHEET STATUS
DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS Right to make changes NXP Semiconductors
reserves the right to make changes to information
Product specification The information and data
published in this document, including without limitation
provided in a Product data sheet shall define the
specifications and product descriptions, at any time and
specification of the product as agreed between NXP
without notice. This document supersedes and replaces all
Semiconductors and its customer, unless NXP
information supplied prior to the publication hereof.
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an Suitability for use NXP Semiconductors products are
agreement be valid in which the NXP Semiconductors not designed, authorized or warranted to be suitable for
product is deemed to offer functions and qualities beyond use in life support, life-critical or safety-critical systems or
those described in the Product data sheet. equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
DISCLAIMERS
property or environmental damage. NXP Semiconductors
Limited warranty and liability Information in this accepts no liability for inclusion and/or use of NXP
document is believed to be accurate and reliable. Semiconductors products in such equipment or
However, NXP Semiconductors does not give any applications and therefore such inclusion and/or use is at
representations or warranties, expressed or implied, as to the customer's own risk.
the accuracy or completeness of such information and
Applications Applications that are described herein for
shall have no liability for the consequences of use of such
any of these products are for illustrative purposes only.
information.
NXP Semiconductors makes no representation or
In no event shall NXP Semiconductors be liable for any warranty that such applications will be suitable for the
indirect, incidental, punitive, special or consequential specified use without further testing or modification.
damages (including - without limitation - lost profits, lost
Customers are responsible for the design and operation of
savings, business interruption, costs related to the
their applications and products using NXP
removal or replacement of any products or rework
Semiconductors products, and NXP Semiconductors
charges) whether or not such damages are based on tort
accepts no liability for any assistance with applications or
(including negligence), warranty, breach of contract or any
customer product design. It is customer's sole
other legal theory.
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur Semiconductors product is suitable and fit for the
for any reason whatsoever, NXP Semiconductors' customer's applications and products planned, as well as
aggregate and cumulative liability towards customer for for the planned application and use of customer's third
the products described herein shall be limited in party customer(s). Customers should provide appropriate
accordance with the Terms and conditions of commercial design and operating safeguards to minimize the risks
sale of NXP Semiconductors. associated with their applications and products.
1997 Sep 05 11
NXP Semiconductors Product specification
N-channel dual-gate MOS-FET BF998WR
NXP Semiconductors does not accept any liability related Export control This document as well as the item(s)
to any default, damage, costs or problem which is based described herein may be subject to export control
on any weakness or default in the customer's applications regulations. Export might require a prior authorization from
or products, or the application or use by customer's third national authorities.
party customer(s). Customer is responsible for doing all
Quick reference data The Quick reference data is an
necessary testing for the customer's applications and
extract of the product data given in the Limiting values and
products using NXP Semiconductors products in order to
Characteristics sections of this document, and as such is
avoid a default of the applications and the products or of
not complete, exhaustive or legally binding.
the application or use by customer's third party
customer(s). NXP does not accept any liability in this Non-automotive qualified products Unless this data
respect. sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
Limiting values Stress above one or more limiting
product is not suitable for automotive use. It is neither
values (as defined in the Absolute Maximum Ratings
qualified nor tested in accordance with automotive testing
System of IEC 60134) will cause permanent damage to
or application requirements. NXP Semiconductors accepts
the device. Limiting values are stress ratings only and
no liability for inclusion and/or use of non-automotive
(proper) operation of the device at these or any other
qualified products in automotive equipment or
conditions above those given in the Recommended
applications.
operating conditions section (if present) or the
Characteristics sections of this document is not warranted. In the event that customer uses the product for design-in
Constant or repeated exposure to limiting values will and use in automotive applications to automotive
permanently and irreversibly affect the quality and specifications and standards, customer (a) shall use the
reliability of the device. product without NXP Semiconductors' warranty of the
product for such automotive applications, use and
Terms and conditions of commercial sale NXP
specifications, and (b) whenever customer uses the
Semiconductors products are sold subject to the general
product for automotive applications beyond NXP
terms and conditions of commercial sale, as published at
Semiconductors' specifications such use shall be solely at
http://www.nxp.com/profile/terms, unless otherwise
customer's own risk, and (c) customer fully indemnifies
agreed in a valid written individual agreement. In case an
NXP Semiconductors for any liability, damages or failed
individual agreement is concluded only the terms and
product claims resulting from customer design and use of
conditions of the respective agreement shall apply. NXP
the product for automotive applications beyond NXP
Semiconductors hereby expressly objects to applying the
Semiconductors' standard warranty and NXP
customer's general terms and conditions with regard to the
Semiconductors' product specifications.
purchase of NXP Semiconductors products by customer.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1997 Sep 05 12
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
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