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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG403W
NPN 17 GHz wideband transistor
Product specification 1998 Mar 11
Supersedes data of 1997 Oct 29
NXP Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
FEATURES PINNING
Low current PIN DESCRIPTION
Very high power gain 1 emitter
Low noise figure 2 base
High transition frequency 3 emitter
Very low feedback capacitance. 4 collector
APPLICATIONS
Pager front ends
RF front end handbook, halfpage 3 4
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors.
2 1
Top view MSB842
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin Marking code: P3.
dual-emitter SOT343R package.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 10 V
VCEO collector-emitter voltage open base 4.5 V
IC collector current (DC) 3 3.6 mA
Ptot total power dissipation Ts 140 C 16 mW
hFE DC current gain IC = 3 mA; VCE = 2 V; Tj = 25 C 50 80 120
Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz 20 fF
fT transition frequency IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 17 GHz
Gmax maximum power gain IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 22 dB
F noise figure IC = 1 mA; VCE = 2 V; f = 900 MHz; S = opt 1 dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1998 Mar 11 2
NXP Semiconductors Product specification
NPN 17 GHz wideband transistor BFG403W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 10 V
VCEO collector-emitter voltage open base 4.5 V
VEBO emitter-base voltage open collector 1 V
IC collector current (DC) 3.6 mA
Ptot total power dissipation Ts 140 C; note 1; see Fig.2 16 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 820 K/W
MGD957
20
handbook, halfpage
Ptot
(mW)
10
0
0 40 80 120 160
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