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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFG410W
  NPN 22 GHz wideband transistor
Product specification                         1998 Mar 11
Supersedes data of 1997 Oct 29
NXP Semiconductors                                                                                          Product specification


     NPN 22 GHz wideband transistor                                                                               BFG410W

FEATURES                                                         PINNING
 Very high power gain                                                        PIN                        DESCRIPTION
 Low noise figure                                                              1            emitter
 High transition frequency                                                     2            base
 Emitter is thermal lead                                                       3            emitter
 Low feedback capacitance.                                                     4            collector

APPLICATIONS
 RF front end
 Wideband applications, e.g. analog and digital cellular         handbook, halfpage     3               4
 telephones, cordless telephones (PHS, DECT, etc.)
 Radar detectors
 Pagers
 Satellite television tuners (SATV)                                                     2               1

 High frequency oscillators.                                                            Top view      MSB842




DESCRIPTION                                                         Marking code: P4.

NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin                          Fig.1 Simplified outline SOT343R.
dual-emitter SOT343R package.

QUICK REFERENCE DATA

 SYMBOL            PARAMETER                              CONDITIONS                            MIN.        TYP.   MAX.   UNIT
VCBO          collector-base voltage      open emitter                                                             10     V
VCEO          collector-emitter voltage   open base                                                                4.5    V
IC            collector current (DC)                                                                        10     12     mA
Ptot          total power dissipation     Ts  110 C                                                                54     mW
hFE           DC current gain             IC = 10 mA; VCE = 2 V; Tj = 25 C                      50          80     120
Cre           feedback capacitance        IC = 0; VCB = 2 V; f = 1 MHz                                      45            fF
fT            transition frequency        IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C                     22            GHz
Gmax          maximum power gain          IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C                     21            dB
F             noise figure                IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt                          1.2           dB


                                                         CAUTION
 This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
 and handling.




1998 Mar 11                                                  2
NXP Semiconductors                                                                                     Product specification


  NPN 22 GHz wideband transistor                                                                            BFG410W

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
 SYMBOL                       PARAMETER                                CONDITIONS            MIN.         MAX.       UNIT
VCBO               collector-base voltage                  open emitter                               10         V
VCEO               collector-emitter voltage               open base                                  4.5        V
VEBO               emitter-base voltage                    open collector                             1          V
IC                 collector current (DC)                                                             12         mA
Ptot               total power dissipation                 Ts  110 C; note 1; see Fig.2               54         mW
Tstg               storage temperature                                                    65          +150       C
Tj                 operating junction temperature                                                     150        C

Note
1. Ts is the temperature at the soldering point of the emitter pins.

THERMAL CHARACTERISTICS

 SYMBOL                                              PARAMETER                                 VALUE             UNIT
Rth j-s            thermal resistance from junction to soldering point                          750              K/W




                                                       MGD960
          60
handbook, halfpage


        Ptot
       (mW)


          40




          20




           0
               0         40        80          120             160
                                                     Ts (

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