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                        BFG424F
                        NPN 25 GHz wideband transistor
                        Rev. 01 -- 21 March 2006                                     Product data sheet




1. Product profile

          1.1 General description
                   NPN double polysilicon wideband transistor with buried layer for low voltage applications
                   in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION
                          This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
                          during transport and handling.

          MSC895




          1.2 Features
                   s    Very high power gain
                   s    Low noise figure
                   s    High transition frequency
                   s    Emitter is thermal lead
                   s    Low feedback capacitance

          1.3 Applications
                   s Radio Frequency (RF) front end wideband applications such as:
                     x analog and digital cellular telephones
                     x cordless telephones (Cordless Telephone (CT), Personal Handy-phone
                       System (PHS), Digital Enhanced Cordless Telecommunications (DECT), etc.)
                     x radar detectors
                     x pagers
                     x Satellite Antenna TeleVison (SATV) tuners
                     x high frequency oscillators e.g. Dielectric Resonator Oscillator (DRO) for Low Noise
                       Block (LNB)

          1.4 Quick reference data
                   Table 1:     Quick reference data
                   Symbol      Parameter                   Conditions                          Min   Typ   Max   Unit
                   VCBO        collector-base voltage      open emitter                        -     -     10    V
                   VCEO        collector-emitter voltage   open base                           -     -     4.5   V
                   IC          collector current                                               -     25    30    mA
                   Ptot        total power dissipation     Tsp  90 

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