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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG425W
NPN 25 GHz wideband transistor
Product specification 2010 Sep 15
Supersedes data of 1998 Mar 11
NXP Semiconductors Product specification
NPN 25 GHz wideband transistor BFG425W
FEATURES PINNING
Very high power gain PIN DESCRIPTION
Low noise figure 1 emitter
High transition frequency 2 base
Emitter is thermal lead 3 emitter
Low feedback capacitance. 4 collector
APPLICATIONS
RF front end 3 4
handbook, halfpage
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Pagers 2 1
Satellite television tuners (SATV) Top view MSB842
High frequency oscillators.
Marking code: P5* * = - : made in Hong Kong
* = p : made in Hong Kong
DESCRIPTION * = t : made in Malaysia
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin Fig.1 Simplified outline SOT343R.
dual-emitter SOT343R package.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 10 V
VCEO collector-emitter voltage open base 4.5 V
IC collector current (DC) 25 30 mA
Ptot total power dissipation Ts 103 C 135 mW
hFE DC current gain IC = 25 mA; VCE = 2 V; Tj = 25 C 50 80 120
Cre feedback capacitance IC = 0; VCB = 2 V; f = 1 MHz 95 fF
fT transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 25 GHz
Gmax maximum power gain IC = 25 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 20 dB
F noise figure IC = 2 mA; VCE = 2 V; f = 2 GHz; S = opt 1.2 dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
2010 Sep 15 2
NXP Semiconductors Product specification
NPN 25 GHz wideband transistor BFG425W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 10 V
VCEO collector-emitter voltage open base 4.5 V
VEBO emitter-base voltage open collector 1 V
IC collector current (DC) 30 mA
Ptot total power dissipation Ts 103 C; note 1; see Fig.2 135 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 350 K/W
MGG681
200
handbook, halfpage
Ptot
(mW)
150
100
50
0
0 40 80 120 160
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