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bfg480w_900mdrv


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                                                                                             H
Philips Semiconductors B.V.
Report nr.    : RNR-45-98-B-0703
Author        : T.F. Buss / J.Bouwman
Date          : 28-10-1998
Department    : Development DSC-N




                                  900 MHz Driver
                                     with the
                                    BFG480W




Abstract:
This application note contains an example of a driver, designed for a frequency f=900MHz.
At f=900 MHz: The output power Pout11dBm, the Noise Figure NF3.2dB, the Gain S21  16dB and
the OIP325dBm. VSWRin  1:2.0, VSWRout  1:1.4
0. Introduction
With the new Philips silicon bipolar double poly BFG400W 5th generation series, it is possible to design
driver-amplifiers and PA's for high frequency applications with a low supply voltage. These amplifiers are
well suited for the new generation low voltage high frequency wireless applications. In this note an
example with the BFG480W driver amplifier will be given. This amplifier is designed for a working
frequency of 900 MHz.


1. 900 MHz Driver with the BFG480W

Designing the circuit:
The circuit is designed to show the following performance:
transistor: BFG480W

Vce~2V, Ic~60mA, VSUP=3.0V
freq=900 MHz
Gain~16dB
VSWRi<1:2
VSWRo<1:2
OIP3>+20dBm

The outputmatching is realised with a LC-combination. Also extra emitter-inductance on both
emitterleads (



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