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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
Product specification 2000 May 23
Supersedes data of 1997 Dec 04
NXP Semiconductors Product specification
BFG540W
NPN 9 GHz wideband transistor
BFG540W/X; BFG540W/XR
FEATURES MARKING
High power gain TYPE NUMBER CODE
Low noise figure BFG540W N9 lfpage 4 3
High transition frequency BFG540W/X N7
Gold metallization ensures BFG540W/XR N8
excellent reliability.
1 2
PINNING
APPLICATIONS Top view MBK523
PIN DESCRIPTION
RF front end wideband applications in
the GHz range, such as analog and BFG540W (see Fig.1)
digital cellular telephones, cordless 1 collector
telephones (CT2, CT3, PCN, DECT, Fig.1 SOT343N.
2 base
etc.), radar detectors, pagers, satellite
television tuners (SATV), 3 emitter
MATV/CATV amplifiers and repeater 4 emitter
amplifiers in fibre-optic systems.
BFG540W/X (see Fig.1)
halfpage 3 4
1 collector
DESCRIPTION
2 emitter
NPN silicon planar epitaxial 3 base
transistors in 4-pin dual-emitter
4 emitter 2 1
SOT343N and SOT343R plastic
packages. BFG540W/XR (see Fig.2) Top view MSB842
1 collector
2 emitter
3 base Fig.2 SOT343R.
4 emitter
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
IC collector current (DC) 120 mA
Ptot total power dissipation Ts 85 C 500 mW
hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250
Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz 0.5 pF
fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 C 9 GHz
GUM maximum unilateral IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 16 dB
power gain IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 C 10 dB
|s21 |2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 C 14 15 dB
F noise figure s opt; IC = 10 mA; VCE = 8 V; f = 2 GHz 2.1 dB
2000 May 23 2
NXP Semiconductors Product specification
BFG540W
NPN 9 GHz wideband transistor
BFG540W/X; BFG540W/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
VEBO emitter-base voltage open collector 2.5 V
IC collector current (DC) 120 mA
Ptot total power dissipation Ts 85 C; see Fig.3; note 1 500 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point Ts 85 C; note 1 180 K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P tot
(mW)
400
200
0
0 50 100 150 200
T s (o C)
VCE 10 V.
Fig.3 Power derating curve.
2000 May 23 3
NXP Semiconductors Product specification
BFG540W
NPN 9 GHz wideband transistor
BFG540W/X; BFG540W/XR
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown open emitter; IC = 10 A ; IE = 0 20 V
voltage
V(BR)CES collector-emitter breakdown RBE = 0; IC = 40 A 15 V
voltage
V(BR)EBO emitter-base breakdown open collector; IE = 100 A; IC = 0 2.5 V
voltage
ICBO collector cut-off current open emitter; VCB = 8 V; IE = 0 50 nA
hFE DC current gain IC = 40 mA; VCE = 8 V 100 120 250
fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; 9 GHz
Tamb = 25 C
Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz 0.9 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 2 pF
Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz 0.5 pF
GUM maximum unilateral power IC = 40 mA; VCE = 8 V; f = 900 MHz; 16 dB
gain; note 1 Tamb = 25 C
IC = 40 mA; VCE = 8 V; f = 2 GHz; 10 dB
Tamb = 25 C
|s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 14 15 dB
Tamb = 25 C
F noise figure s opt; IC = 10 mA; VCE = 8 V; 1.3 1.8 dB
f = 900 MHz
s opt; IC = 40 mA; VCE = 8 V; 1.9 2.4 dB
f = 900 MHz
s opt; IC = 10 mA; VCE = 8 V; 2.1 dB
f = 2 GHz
PL1 output power at 1 dB gain IC = 40 mA; VCE = 8 V; f = 900 MHz; 21 dBm
compression RL = 50 ; Tamb = 25 C
ITO third order intercept point note 2 34 dBm
Vo output voltage note 3 500 mV
d2 second order intermodulation note 4 50 dB
distortion
Notes
s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------- dB.
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