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                   DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFG591
  NPN 7 GHz wideband transistor
Product specification                        1995 Sep 04
Supersedes data of November 1992
NXP Semiconductors                                                                                         Product specification


     NPN 7 GHz wideband transistor                                                                                  BFG591

FEATURES                                  DESCRIPTION
 High power gain                          NPN silicon planar epitaxial transistor      lfpage                            4

 Low noise figure                         in a plastic, 4-pin SOT223 package.

 High transition frequency
 Gold metallization ensures               PINNING
 excellent reliability.                      PIN             DESCRIPTION
                                               1      emitter
APPLICATIONS
                                               2      base
Intended for applications in the GHz           3      emitter                                         1            2             3
range such as MATV or CATV
                                               4      collector                                 Top view                 MSB002 - 1
amplifiers and RF communications
subscriber equipment.                                                                                Fig.1 SOT223.


QUICK REFERENCE DATA

 SYMBOL             PARAMETER                         CONDITIONS                       MIN.         TYP.          MAX.           UNIT
VCBO         collector-base voltage       open emitter                                                        20             V
VCEO         collector-emitter voltage    open base                                                           15             V
IC           collector current (DC)                                                                           200            mA
Ptot         total power dissipation      up to Ts = 80 C; note 1                                             2              W
hFE          DC current gain              IC = 70 mA; VCE = 8 V                     60          90            250
Cre          feedback capacitance         IC = Ic = 0; VCE = 12 V; f = 1 MHz                    0.7                          pF
fT           transition frequency         IC = 70 mA; VCE = 12 V; f = 1 GHz                     7                            GHz
GUM          maximum unilateral power IC = 70 mA; VCE = 12 V;                                   13                           dB
             gain                     f = 900 MHz; Tamb = 25 C
        2    insertion power gain         IC = 70 mA; VCE = 12 V;                               12                           dB
 s 21
                                          f = 900 MHz; Tamb = 25 C

Note
1. Ts is the temperature at the soldering point of the collector pin.




1995 Sep 04                                                     2
NXP Semiconductors                                                                           Product specification


  NPN 7 GHz wideband transistor                                                                     BFG591

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
 SYMBOL                    PARAMETER                               CONDITIONS         MIN.      MAX.      UNIT
VCBO         collector-base voltage                      open emitter                          20        V
VCEO         collector-emitter voltage                   open base                             15        V
VEBO         emitter-base voltage                        open collector                        3         V
IC           collector current (DC)                                                            200       mA
Ptot         total power dissipation                     up to Ts = 80 C; note 1               2         W
Tstg         storage temperature                                                   65          +150      C
Tj           junction temperature                                                              150       C


THERMAL CHARACTERISTICS

 SYMBOL                    PARAMETER                               CONDITIONS         VALUE             UNIT
Rth j-s      thermal resistance from junction to         note 1                         35              K/W
             soldering point
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.




1995 Sep 04                                                  3
NXP Semiconductors                                                                                                         Product specification


      NPN 7 GHz wideband transistor                                                                                                BFG591

CHARACTERISTICS
Tj = 25 C (unless otherwise specified).

 SYMBOL                       PARAMETER                                    CONDITIONS                        MIN.      TYP.      MAX.       UNIT
 V(BR)CBO      collector-base breakdown voltage                 IC = 0.1 mA; IE = 0                      20                                V
 V(BR)CES      collector-emitter breakdown voltage              IC = 10 mA; IB = 0                       15                                V
 V(BR)EBO      emitter-base breakdown voltage                   IE = 0.1 mA; IC = 0                      3                                 V
 ICBO          collector-base leakage current                   IE = 0; VCB = 10 V                                              100        nA
 hFE           DC current gain                                  IC = 70 mA; VCE = 8 V                    60         90          250
 Cre           feedback capacitance                             IB = Ib = 0; VCE = 12 V;                            0.7                    pF
                                                                f = 1 MHz
 fT            transition frequency                             IC = 70 mA; VCE = 12 V;                             7                      GHz
                                                                f = 1 GHz
 GUM           maximum unilateral power gain;                   IC = 70 mA; VCE = 12 V;                             13                     dB
               note 1                                           f = 900 MHz; Tamb = 25 C
                                                                IC = 70 mA; VCE = 12 V;                             7.5                    dB
                                                                f = 2 GHz; Tamb = 25 C
         2     insertion power gain                             IC = 70 mA; VCE = 12 V;                             12                     dB
  s 21
                                                                f = 1 GHz; Tamb = 25 C
 Vo            output voltage                                   note 2                                              700                    mV

Notes
                                                                                                        s 21 2
1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------- dB.
                                                                                     1 



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