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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG97
NPN 5 GHz wideband transistor
Product specification September 1995
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFG97
DESCRIPTION PINNING
NPN planar epitaxial transistor age 4
PIN DESCRIPTION
mounted in a plastic SOT223
1 emitter
envelope.
It features excellent output voltage 2 base
capabilities, and is primarily intended 3 emitter
for use in MATV applications. 4 collector
PNP complement is the BFG31.
1 2 3
Top view MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
IC DC collector current 100 mA
Ptot total power dissipation up to Ts = 125 C (note 1) 1 W
hFE DC current gain IC = 70 mA; VCE = 10 V; Tj = 25 C 25 80
fT transition frequency IC = 70 mA; VCE = 10 V; 5.5 GHz
f = 500 MHz; Tamb = 25 C
GUM maximum unilateral power gain IC = 70 mA; VCE = 10 V; 16 dB
f = 500 MHz; Tamb = 25 C
IC = 70 mA; VCE = 10 V; 12 dB
f = 800 MHz; Tamb = 25 C
Vo output voltage IC = 70 mA; VCE = 10 V; 700 mV
dim = 60 dB; RL = 75 ;
f(pqr) = 793.25 MHz; Tamb = 25 C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 3 V
IC DC collector current 100 mA
Ptot total power dissipation up to Ts = 125 C (note 1) 1 W
Tstg storage temperature 65 150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995 2
NXP Semiconductors Product specification
NPN 5 GHz wideband transistor BFG97
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to up to Ts = 125 C (note 1) 50 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 10 V 100 nA
hFE DC current gain IC = 70 mA; VCE = 10 V 25 80
fT transition frequency IC = 70 mA; VCE = 10 V; 5.5 GHz
f = 500 MHz; Tamb = 25 C
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 1.5 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 6.5 pF
Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz 1 pF
GUM maximum unilateral power gain IC = 70 mA; VCE = 10 V; 16 dB
(note 1) f = 500 MHz; Tamb = 25 C
IC = 70 mA; VCE = 10 V; 12 dB
f = 800 MHz; Tamb = 25 C
Vo output voltage note 2 750 mV
note 3 700 mV
d2 second order intermodulation note 4 56 dB
distortion note 5 53 dB
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log --------------------------------------------------------- dB.
2 2
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