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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFG97
  NPN 5 GHz wideband transistor
Product specification                         September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors                                                                                 Product specification


     NPN 5 GHz wideband transistor                                                                                    BFG97

DESCRIPTION                                PINNING
NPN planar epitaxial transistor                                                     age                                4
                                            PIN           DESCRIPTION
mounted in a plastic SOT223
                                              1      emitter
envelope.
It features excellent output voltage          2      base
capabilities, and is primarily intended       3      emitter
for use in MATV applications.                 4      collector
PNP complement is the BFG31.

                                                                                                   1          2             3
                                                                                          Top view                     MSB002 - 1



                                                                                                Fig.1 SOT223.


QUICK REFERENCE DATA

 SYMBOL                 PARAMETER                                    CONDITIONS            MIN.        TYP.       MAX.          UNIT
VCBO         collector-base voltage               open emitter                            -            -          20            V
VCEO         collector-emitter voltage            open base                               -            -          15            V
IC           DC collector current                                                         -            -          100           mA
Ptot         total power dissipation              up to Ts = 125 

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