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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG198
NPN 8 GHz wideband transistor
Product specification 1995 Sep 12
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
DESCRIPTION PINNING
NPN planar epitaxial transistor in a PIN DESCRIPTION
plastic SOT223 envelope, intended fpage 4
1 emitter
for wideband amplifier applications.
The device features a high gain and 2 base
excellent output voltage capabilities. 3 emitter
4 collector
1 2 3
Top view MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
IC DC collector current 100 mA
Ptot total power dissipation up to Ts = 135 C (note 1) 1 W
hFE DC current gain IC = 50 mA; VCE = 5 V; Tj = 25 C 40 90
fT transition frequency IC = 50 mA; VCE = 8 V; f = 1 GHz; 8 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 50 mA; VCE = 8 V; f = 500 MHz; 18 dB
gain Tamb = 25 C
IC = 50 mA; VCE = 8 V; f = 800 MHz; 15 dB
Tamb = 25 C
Vo output voltage dim = 60 dB; IC = 70 mA; VCE = 8 V; 700 mV
RL = 75 ; Tamb = 25 C;
f(p+qr) = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 10 V
VEBO emitter-base voltage open collector 2.5 V
IC DC collector current 100 mA
Ptot total power dissipation up to Ts = 135 C (note 1) 1 W
Tstg storage temperature 65 +150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12 2
NXP Semiconductors Product specification
NPN 8 GHz wideband transistor BFG198
THERMAL CHARACTERISTICS
VALU
SYMBOL PARAMETER CONDITIONS UNIT
E
Rth j-s thermal resistance from junction to soldering point up to Ts = 135 C (note 1) 40 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 5 V 100 nA
hFE DC current gain IC = 50 mA; VCE = 5 V 40 90
Cc collector capacitance IE = ie = 0; VCB = 8 V; f = 1 MHz 1.5 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 4 pF
Cre feedback capacitance IC = 0; VCE = 8 V; f = 1 MHz 0.8 pF
fT transition frequency IC = 50 mA; VCE = 8 V; f = 1 GHz; 8 GHz
Tamb = 25 C
GUM maximum unilateral power IC = 50 mA; VCE = 8 V; f = 500 MHz; 18 dB
gain; note 1 Tamb = 25 C
IC = 50 mA; VCE = 8 V; f = 800 MHz; 15 dB
Tamb = 25 C
Vo output voltage note 2 750 mV
note 3 700 mV
d2 second order note 4 55 dB
intermodulation distortion
Notes
s 21 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------- dB.
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