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bfg198_3


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                    DISCRETE SEMICONDUCTORS




  DATA SHEET




  BFG198
  NPN 8 GHz wideband transistor
Product specification                         1995 Sep 12
File under Discrete Semiconductors, SC14
Philips Semiconductors                                                                                 Product specification


     NPN 8 GHz wideband transistor                                                                                 BFG198

DESCRIPTION                               PINNING
NPN planar epitaxial transistor in a           PIN          DESCRIPTION
plastic SOT223 envelope, intended                                                 age                               4
                                           1         emitter
for wideband amplifier applications.
The device features a high gain and        2         base
excellent output voltage capabilities.     3         emitter
                                           4         collector




                                                                                                   1           2         3
                                                                                           Top view                 MSB002 - 1


                                                                                                Fig.1 SOT223.

QUICK REFERENCE DATA

 SYMBOL             PARAMETER                            CONDITIONS                     MIN.       TYP.     MAX.          UNIT
VCBO         collector-base voltage        open emitter                            -           -           20           V
VCEO         collector-emitter voltage     open base                               -           -           10           V
IC           DC collector current                                                  -           -           100          mA
Ptot         total power dissipation       up to Ts = 135



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