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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFG21W
UHF power transistor
Product specification 1998 Jul 06
Supersedes data of 1997 Nov 21
NXP Semiconductors Product specification
UHF power transistor BFG21W
FEATURES PINNING
High power gain PIN DESCRIPTION
High efficiency 1, 3 emitter
1.9 GHz operating area 2 base
Linear and non-linear operation. 4 collector
APPLICATIONS
Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc. handbook, halfpage 3 4
Driver for DCS1800, 1900.
DESCRIPTION
2 1
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications Top view MSB842
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package. Marking code: P1.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
RF performance at Ts 60 C in a common emitter test circuit.
f VCE PL Gp C
MODE OF OPERATION
(GHz) (V) (dBm) (dB) (%)
Pulsed class-AB; < 1 : 2; tp = 5 ms 1.9 3.6 26 10 typ.55
1998 Jul 06 2
NXP Semiconductors Product specification
UHF power transistor BFG21W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 4.5 V
VEBO emitter-base voltage open collector 1 V
IC collector current (DC) 500 mA
Ptot total power dissipation Ts 60 C; note 1 600 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to Ts 60 C; Ptot = 600 mW; note 1 150 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the emitter pins.
MGM219
103
handbook, full pagewidth
Rth
(K/W)
=
1
102 0.75
0.5
0.33
0.2
0.1
10 0.05 tp
P =
T
0.02
0.01
0 tp t
T
1
10-6 10-5 10-4 10-3 10-2 10-1 1
tp (s)
At temperature stabilization solder point has been reached.
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
1998 Jul 06 3
NXP Semiconductors Product specification
UHF power transistor BFG21W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 15 V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 4.5 V
V(BR)CER collector-emitter breakdown voltage RBE < 1 k, IC = 10 mA 10 V
V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 1 V
ICES collector leakage current VCE = 5 V; VBE = 0 10 A
hFE DC current gain IC = 200 mA; VCE = 2 V 40 100
Cc collector capacitance IE = ie= 0; VCB = 3 V; f = 1 MHz 3 pF
Cre feedback capacitance IC = 0; VCB = 3.6 V; f = 1 MHz 1.5 pF
fT transition frequency IC = 200 mA; VCE = 3.6 V; 18 GHz
f = 700 MHz
APPLICATION INFORMATION
RF performance at Ts 60 C in a common emitter test circuit (see Figs 4 and 5).
f VCE ICQ PL Gp C
MODE OF OPERATION
(GHz) (V) (mA) (dBm) (dB) (%)
Pulsed; class-AB; < 1 : 2; tp = 5 ms 1.9 3.6 1 26 10 typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at 16
MGM220
80
26 dBm output power under pulsed conditions: = 1 : 2; handbook, halfpage
Gp C
tp = 5 ms; f = 1.9 GHz at VCE = 4.5 V. (%)
(dB) Gp
12 60
8 40
C
4 20
0 0
5 10 15 20 25 30
PL (dBm)
Pulsed, class-AB operation; < 1 : 2; tp = 5 ms.
f = 1.9 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 26 dBm.
Fig.3 Power gain and collector efficiency as a
function of the load power; typical values.
1998 Jul 06 4
NXP Semiconductors Product specification
UHF power transistor BFG21W
handbook, full pagewidth VC VS
R1
L5
R2
R3 C7
TR1 C6
C3
L4
L1 L3 C5
RF output
L2 50
RF input C1
50 DUT
C2 C4
MGM221
Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.
List of components used in test circuit (see Figs 4 and 5)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C5 multilayer ceramic chip capacitor; note 1 24 pF
C2 multilayer ceramic chip capacitor; note 1 3.3 pF
C3, C6 multilayer ceramic chip capacitor, note 1 15 pF
C4 multilayer ceramic chip capacitor; note 1 2.4 pF
C7 multilayer ceramic chip capacitor; note 1 1 nF
L1, L4 stripline; note 2 100 18 0.2 mm
L2 stripline; note 2 50 3.2 0.8 mm
L3 stripline; note 2 50 4.6 0.8 mm
L5 Grade 4S2 Ferroxcube chip bead 4330 030 36300
R1 metal film resistor 220 ; 0.4 W
R2, R3 metal film resistor 10 ; 0.4 W
TR1 NPN transistor BC817 9335 895 20215
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 6.15,
tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m.
1998 Jul 06 5
NXP Semiconductors Product specification
UHF power transistor BFG21W
handbook, full pagewidth 45
35
VC VS
TR1 R1
R2 L5
R3 C7
C3 C6
L1 L4
C2
C1 C5
L2
L3
DUT C4
input output
MGM222
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4.
1998 Jul 06 6
NXP Semiconductors Product specification
UHF power transistor BFG21W
MGM223 MGM224
10 16
handbook, halfpage handbook, halfpage
Z
Zi L
() RL
()
ri 12
8
8
6
4
xi
4
0
XL
2
-4
0 -8
1.8 1.85 1.9 1.95 2.0 1.8 1.85 1.9 1.95 2.0
f (GHz) f (GHz)
VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C. VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C.
Fig.6 Input impedance as function of frequency Fig.7 Load impedance as a function of frequency
(series components); typical values. (series components); typical values.
1998 Jul 06 7
NXP Semiconductors Product specification
UHF power transistor BFG21W
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
D B E A X
y HE v M A
e
3 4
Q
A
A1
c
2 1
w M B bp b1 Lp
e1
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp b1 c D E e e1 HE Lp Q v w y
max
1.1 0.4 0.7 0.25 2.2 1.35 2.2 0.45 0.23
mm 0.1 1.3 1.15 0.2 0.2 0.1
0.8 0.3 0.5 0.10 1.8 1.15 2.0 0.15 0.13
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
97-05-21
SOT343R
06-03-16
1998 Jul 06 8
NXP Semiconductors Product specification
UHF power transistor BFG21W
DATA SHEET STATUS
DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS Right to make changes NXP Semiconductors
reserves the right to make changes to information
Product specification The information and data
published in this document, including without limitation
provided in a Product data sheet shall define the
specifications and product descriptions, at any time and
specification of the product as agreed between NXP
without notice. This document supersedes and replaces all
Semiconductors and its customer, unless NXP
information supplied prior to the publication hereof.
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an Suitability for use NXP Semiconductors products are
agreement be valid in which the NXP Semiconductors not designed, authorized or warranted to be suitable for
product is deemed to offer functions and qualities beyond use in life support, life-critical or safety-critical systems or
those described in the Product data sheet. equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
DISCLAIMERS
property or environmental damage. NXP Semiconductors
Limited warranty and liability Information in this accepts no liability for inclusion and/or use of NXP
document is believed to be accurate and reliable. Semiconductors products in such equipment or
However, NXP Semiconductors does not give any applications and therefore such inclusion and/or use is at
representations or warranties, expressed or implied, as to the customer's own risk.
the accuracy or completeness of such information and
Applications Applications that are described herein for
shall have no liability for the consequences of use of such
any of these products are for illustrative purposes only.
information.
NXP Semiconductors makes no representation or
In no event shall NXP Semiconductors be liable for any warranty that such applications will be suitable for the
indirect, incidental, punitive, special or consequential specified use without further testing or modification.
damages (including - without limitation - lost profits, lost
Customers are responsible for the design and operation of
savings, business interruption, costs related to the
their applications and products using NXP
removal or replacement of any products or rework
Semiconductors products, and NXP Semiconductors
charges) whether or not such damages are based on tort
accepts no liability for any assistance with applications or
(including negligence), warranty, breach of contract or any
customer product design. It is customer's sole
other legal theory.
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur Semiconductors product is suitable and fit for the
for any reason whatsoever, NXP Semiconductors' customer's applications and products planned, as well as
aggregate and cumulative liability towards customer for for the planned application and use of customer's third
the products described herein shall be limited in party customer(s). Customers should provide appropriate
accordance with the Terms and conditions of commercial design and operating safeguards to minimize the risks
sale of NXP Semiconductors. associated with their applications and products.
1998 Jul 06 9
NXP Semiconductors Product specification
UHF power transistor BFG21W
NXP Semiconductors does not accept any liability related Export control This document as well as the item(s)
to any default, damage, costs or problem which is based described herein may be subject to export control
on any weakness or default in the customer's applications regulations. Export might require a prior authorization from
or products, or the application or use by customer's third national authorities.
party customer(s). Customer is responsible for doing all
Quick reference data The Quick reference data is an
necessary testing for the customer's applications and
extract of the product data given in the Limiting values and
products using NXP Semiconductors products in order to
Characteristics sections of this document, and as such is
avoid a default of the applications and the products or of
not complete, exhaustive or legally binding.
the application or use by customer's third party
customer(s). NXP does not accept any liability in this Non-automotive qualified products Unless this data
respect. sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
Limiting values Stress above one or more limiting
product is not suitable for automotive use. It is neither
values (as defined in the Absolute Maximum Ratings
qualified nor tested in accordance with automotive testing
System of IEC 60134) will cause permanent damage to
or application requirements. NXP Semiconductors accepts
the device. Limiting values are stress ratings only and
no liability for inclusion and/or use of non-automotive
(proper) operation of the device at these or any other
qualified products in automotive equipment or
conditions above those given in the Recommended
applications.
operating conditions section (if present) or the
Characteristics sections of this document is not warranted. In the event that customer uses the product for design-in
Constant or repeated exposure to limiting values will and use in automotive applications to automotive
permanently and irreversibly affect the quality and specifications and standards, customer (a) shall use the
reliability of the device. product without NXP Semiconductors' warranty of the
product for such automotive applications, use and
Terms and conditions of commercial sale NXP
specifications, and (b) whenever customer uses the
Semiconductors products are sold subject to the general
product for automotive applications beyond NXP
terms and conditions of commercial sale, as published at
Semiconductors' specifications such use shall be solely at
http://www.nxp.com/profile/terms, unless otherwise
customer's own risk, and (c) customer fully indemnifies
agreed in a valid written individual agreement. In case an
NXP Semiconductors for any liability, damages or failed
individual agreement is concluded only the terms and
product claims resulting from customer design and use of
conditions of the respective agreement shall apply. NXP
the product for automotive applications beyond NXP
Semiconductors hereby expressly objects to applying the
Semiconductors' standard warranty and NXP
customer's general terms and conditions with regard to the
Semiconductors' product specifications.
purchase of NXP Semiconductors products by customer.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1998 Jul 06 10
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
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