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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG31
PNP 5 GHz wideband transistor
Product specification 1995 Sep 12
Supersedes data of November 1992
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
FEATURES PINNING
High output voltage capability PIN DESCRIPTION lfpage 4
High gain bandwidth product 1 emitter
Good thermal stability 2 base
Gold metallization ensures 3 emitter
excellent reliability.
4 collector
DESCRIPTION
PNP planar epitaxial transistor 1 2 3
mounted in a plastic SOT223
Top view MSB002 - 1
envelope.
It is intended for wideband amplifier Fig.1 SOT223.
applications.
NPN complement is the BFG97.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base 15 V
IC DC collector current 100 mA
Ptot total power dissipation up to Ts = 135 C ; note 1 1 W
hFE DC current gain IC = 70 mA; VCE = 10 V; 25
Tamb = 25 C
fT transition frequency IC = 70 mA; VCE = 10 V; 5.0 GHz
f = 500 MHz; Tamb = 25 C
GUM maximum unilateral power IC = 70 mA; VCE = 10 V; 12 dB
gain f = 800 MHz; Tamb = 25 C
Vo output voltage IC = 100 mA; VCE = 10 V; 600 mV
RL = 75 ; Tamb = 25 C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCEO collector-emitter voltage open base 15 V
VEBO emitter-base voltage open collector 3 V
IC DC collector current 100 mA
Ptot total power dissipation up to Ts = 135 C; note 1 1 W
Tstg storage temperature 65 150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12 2
NXP Semiconductors Product specification
PNP 5 GHz wideband transistor BFG31
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to up to Ts = 135 C; note 1 40 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage open emitter; IC = 10 mA 20 V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 18 V
V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 3 V
ICBO collector cut-off current IE = 0; VCB = 10 V 1 A
hFE DC current gain IC = 70 mA; VCE = 10 V; 25
Tamb = 25 C
Ccb collector-base capacitance IC = 0; VCB = 10 V; f = 1 MHz; 1.8 pF
Ceb emitter-base capacitance IC = 0; VEB = 10 V; f = 1 MHz 5 pF
Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz; 1.6 pF
Tamb = 25 C
fT transition frequency IC = 70 mA; VCE = 10 V; 5 GHz
f = 500 MHz; Tamb = 25 C
GUM maximum unilateral power gain; note 1 IC = 70 mA; VCE = 10 V; 16 dB
f = 500 MHz; Tamb = 25 C
IC = 70 mA; VCE = 10 V; 12 dB
f = 800 MHz; Tamb = 25 C
Vo output voltage note 2 600 mV
Vo output voltage note 3 550 mV
Notes
s 21 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------- dB.
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