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                   BFG325/XR
                   NPN 14 GHz wideband transistor
                   Rev. 01 -- 2 February 2005                                    Product data sheet




1. Product profile

          1.1 General description
              NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.

          1.2 Features
              s    High power gain
              s    Low noise figure
              s    High transition frequency
              s    Gold metallization ensures excellent reliability

          1.3 Applications
              s Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
                 x analog and digital cellular telephones
                 x cordless telephones (Cordless Telephone (CT), Personal Communication
                    Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
                 x radar detectors
                 x pagers
                 x Satellite Antenna TeleVision (SATV) tuners
                 x repeater amplifiers in fiber-optic systems

          1.4 Quick reference data
              Table 1:    Quick reference data
              Symbol Parameter                       Conditions                        Min   Typ    Max   Unit
              VCBO       collector-base voltage      open emitter                      -     -      15    V
              VCEO       collector-emitter voltage   open base                         -     -      6     V
              IC         collector current (DC)                                        -     -      35    mA
              Ptot       total power dissipation     Tsp  90 

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