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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35
NPN 4 GHz wideband transistor
Product specification 1999 Aug 24
Supersedes data of 1995 Sep 12
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
DESCRIPTION PINNING
NPN planar epitaxial transistor PIN DESCRIPTION lfpage 4
mounted in a plastic SOT223
1 emitter
envelope, intended for wideband
amplifier applications. It features high 2 base
output voltage capabilities. 3 emitter
4 collector
1 2 3
Top view MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCEO collector-emitter voltage open base 18 V
IC DC collector current 150 mA
Ptot total power dissipation up to Ts = 135 C (note 1) 1 W
hFE DC current gain IC = 100 mA; VCE = 10 V; Tj = 25 C 25 70
fT transition frequency IC = 100 mA; VCE = 10 V; 4 GHz
f = 500 MHz; Tamb = 25 C
GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; 15 dB
f = 500 MHz; Tamb = 25 C
IC = 100 mA; VCE = 10 V; 11 dB
f = 800 MHz; Tamb = 25 C
Vo output voltage IC = 100 mA; VCE = 10 V; 750 mV
dim = 60 dB; RL = 75 ;
f(p+qr) = 793.25 MHz; Tamb = 25 C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 25 V
VCEO collector-emitter voltage open base 18 V
VEBO emitter-base voltage open collector 2 V
IC DC collector current 150 mA
Ptot total power dissipation up to Ts = 135 C (note 1) 1 W
Tstg storage temperature 65 +150 C
Tj junction temperature 175 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 24 2
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFG35
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to soldering point up to Ts = 135 C (note 1) 40 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 10 V 1 A
hFE DC current gain IC = 100 mA; VCE = 10 V 25 70
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz 2 pF
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 10 pF
Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz 1.2 pF
fT transition frequency IC = 100 mA; VCE = 10 V; 4 GHz
f = 500 MHz; Tamb = 25 C
GUM maximum unilateral power gain IC = 100 mA; VCE = 10 V; 15 dB
(note 1) f = 500 MHz; Tamb = 25 C
IC = 100 mA; VCE = 10 V; 11 dB
f = 800 MHz; Tamb = 25 C
Vo output voltage note 2 750 mV
note 3 800 mV
d2 second order intermodulation note 4 55 dB
distortion note 5 57 dB
Notes
s 21 2
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------- dB.
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